• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.7-10
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• 2015

Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.

• Journal of the Korea Society of Computer and Information
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• v.7 no.3
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• pp.42-48
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• 2002

Placement is an important step in the physical design of VLSI circuits. It is the problem of placing a set of circuit modules on a chip to optimize the circuit performance. The most popular algorithms for placement include the cluster growth, simulated annealing and integer linear programming. In this paper we propose a genetic algorithm searching solution space for the placement problem, and then compare it with simulated annealing by analyzing the results of each implementation.

• Journal of Korean Society of Transportation
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• v.17 no.5
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• pp.111-122
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• 1999

A service network design model for LTL freight transportation is formulated as a mixed integer Programming Problem with two heuristic solution a1gorithms. The Proposed model derives the transportation Path for each origination-destination pair, taking into account transportation cost over the links and handling costs over the nodes. The first algorithm searches for a local minimum solution from a given initial solution by improving the quality of solution repeatedly while the second a1gorithm searches for a better solution using Simulated Annealing Method. For both solution algorithms, the initial solution is derived by a modified reverse Diikstras shortest Path a1gorithm. An illustrative example, Presented in the last part of the Paper, shows that the proposed algorithms find solutions which reduce the cost by 12% and 15% respectively, compared to the initial solution.

• Journal of the Korean Operations Research and Management Science Society
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• v.20 no.1
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• pp.63-81
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• 1995

This paper presents a model and algorithm for solving the multi-factor plant layout problem. The model can incorporate more than two factors that may be either quantitative or qualitative. The algorithm is based on simulated annealing, which has been successfully applied for the solution of combinatorial problems. A set of problems previously used by various authors is solved to demonstrate the effectiveness of the proposed methods. The results indicate that the proposed methods can yield good quality for each of eleven test problems.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Journal of Korea Multimedia Society
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• v.9 no.1
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• pp.119-126
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• 2006

The task scheduling in multiprocessor system is one of the key elements in the effective utilization of multiprocessor systems. The optimal assignment of tasks to multiprocessor is, in almost practical cases, an NP-hard problem. Consequently algorithms based on various modern heuristics have been proposed for practical reason. This paper proposes a new task scheduling algorithm using Genetic Algorithm which combines simulated annealing (GA+SA) in multiprocessor environment. In solution algorithms, the Genetic Algorithm (GA) and the simulated annealing (SA) are cooperatively used. In this method, the convergence of GA is improved by introducing the probability of SA as the criterion for acceptance of new trial solution. The objective of proposed scheduling algorithm is to minimize makespan. The effectiveness of the proposed algorithm is shown through simulation studies. In simulation studies, the result of proposed algorithm is better than that of any other algorithms.

• Journal of KIISE:Computer Systems and Theory
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• v.33 no.8
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• pp.486-494
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• 2006

In this paper, we introduce a new solution for the load balancing problem, an important issue in parallel processing. Our heuristic load balancing technique called MGA effectively combines the benefit of both mean-field annealing (MFA) and genetic algorithms (GA). We compare the proposed MGA algorithm with other mapping algorithms (MFA, GA-l, and GA-2). A multiprocessor mapping algorithm simulation has been developed to measure performance improvement ratio of these algorithms. Our experimental results show that our new technique, the composition of heuristic mapping methods improves performance over the conventional ones, in terms of solution quality with a longer run time.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.