Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.318.1-318.1
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- 2016
Hafnium Oxide Layer Based Metal-Oxide-Semiconductor (MOS) Capacitors with Annealing Temperature Variation
- Published : 2016.02.17
Abstract
Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using