• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.67-73
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• 2009

Cu pillar 범프를 사용한 플립칩 접속부는 솔더범프 접속부에 비해 칩과 기판사이의 거리를 감소시키지 않으면서 미세피치 접속이 가능하기 때문에, 특히 기생 캐패시턴스를 억제하기 위해 칩과 기판사이의 큰 거리가 요구되는 RF 패키지에서 유용한 칩 접속공정이다. 본 논문에서는 칩에는 Cu pillar 범프, 기판에는 Sn 범프를 전기도금하고 이들을 플립칩 본딩하여 Cu pillar 범프 접속부를 형성 한 후, Sn 전기도금 범프의 높이에 따른 Cu pillar 범프 접속부의 접속저항과 칩 전단하중을 측정하였다. 전기도금한 Sn 범프의 높이를 5 ${\mu}m$에서 30 ${\mu}m$로 증가시킴에 따라 Cu pillar 범프 접속부의 접속저항이 31.7 $m{\Omega}$에서 13.8 $m{\Omega}$로 향상되었으며, 칩 전단하중이 3.8N에서 6.8N으로 증가하였다. 반면에 접속부의 종횡비는 1.3에서 0.9로 저하하였으며, 접속부의 종횡비, 접속저항 및 칩 전단하중의 변화거동으로부터 Sn 전기도금 범프의 최적 높이는 20 ${\mu}m$로 판단되었다.

• 마이크로전자및패키징학회지
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• 제6권4호
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• pp.61-71
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• 1999

통신분야에서 사용주파수대역의 증가, 제품의 소형화 및 가격경쟁력등의 요구에 따라 RF 소자의 패키징 기술도 플라스틱 패키지 대신에 flip chip interconnection, MCM(multichip module)등과 같은 고밀도 실장기술이 발전해가고 있다. 따라서, 본 논문은 최근 수년간 보고된 응용사례를 중심으로 RF flip chip의 기술적인 개발방향과 장점들을 분석하였고, RF 소자 및 시스템의 개발단계에 따른 적합한 적용기술을 제시하였다. RF flip chip의 기술동향을 요약하면, 1) RF chip배선은 microstrip 대신에 CPW 구조을 선택하며, 2) wafer back-side grinding을 하지 않아서 제조공정이 단순하고 wafer 파손이 적어 제조비용을 낮출 수 있고, 3) wire bonding 패키징에 비해 전기적인 특성이 우수하고 고집적의 송수신 모듈개발에 적합하다는 것이다. 그러나, CPW 배선구조의 RF flip chip 특성에 대한 충분한 연구가 필요하며 RF flip chip의 초기 개발 단계에서 flip chip interconnection 방법으로는 Au stud bump bonding이 적합할 것으로 제안한다.

• 한국재료학회지
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• 제5권7호
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• pp.794-801
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• 1995

LCD 모듈을 위한 실장 기술인 Chip on Glass 공정 기술을 개발함에 있어 구동 IC와 기판d의 Al 전극을 연결하기 위하여 기존의 기술과의 연관성 및 공정의 연속성, 제조단가등을 고려하여 Pb-Sn 범프를 사용하고자 하였으며 이를 위해 Al 금속 박막위에 니켈 무전해 도금하는 방법을 연구 하였다. Al 전극에 무전해 니켈 도금하기 위해서는 광레지스트 차폐막을 손상하지 않는 전처리 방법이 필요하기 때문에 전처리 방법으로서 알칼리 아연산염 처리법과 불화물을 이용한 아연산염 처리법을 선택하여 실시하였다. 이 가운데 산성불화암모늄(NH$_4$HF)을 1.5 g/$\ell$ 함유하고 황산아연(ZnSO$_4$)을 100 g/$\ell$ 함유한 산성 아연산염 용액에서는 광레지스트 차폐막이 손상되지 않았으며 처리시간을 적절히 조절함으로써 알루미늄 박막상에 선택적으로 니켈 무전해 도금을 할 수 있었다. 아연산염 응액중의 첨가제와 무전해 도금액 중의 억제제인 Thiourea는 도금층의 평활도를 높이는 역할을 하였다. 또한 아연산염 처리를 하기 전에 산세 처리를 함으로써 도금층의 균일성을 향상시킬 수 있었다.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.10-15
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• 2016

In this paper, novel ball grid array (BGA) interconnection process using solderable anisotropic conductive adhesives (SACAs) with low-melting-point alloy (LMPA) fillers have been developed to enhance the processability in the conventional capillary underfill technique and to overcome the limitations in the no-flow underfill technique. To confirm the feasibility of the proposed technique, BGA interconnection test was performed using two types of SACA with different LMPA concentration (0 and 4 vol%). After the interconnection process, the interconnection characteristics such as morphology of conduction path and electrical properties of BGA assemblies were inspected and compared. The results indicated that BGA assemblies using SACA without LMPA fillers showed weak conduction path formation such as solder bump loss or short circuit formation because of the expansion of air bubbles within the interconnection area due to the relatively high reflow peak temperature. Meanwhile, assemblies using SACA with 4 vol% LMPAs showed stable metallurgical interconnection formation and electrical resistance due to the favorable selective wetting behavior of molten LMPAs for the solder bump and Cu metallization.

• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.81-88
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• 2010

Sn-3.0Ag-0.5Cu 솔더범프의 금속간화합물 성장거동에 미치는 PCB 표면처리의 영향을 알아보기 위해서 PCB 패드 표면에 각각 OSP, immersion Sn, 그리고 ENIG를 처리하였고, 열처리는 $150^{\circ}C$ 조건에서 실험을 실시하였다. 또한, 전류인가시 Sn-3.0Ag-0.5Cu 솔더범프의 접합부 계면반응에 미치는 표면처리의 영향을 알아보기 위해서 $150^{\circ}C$, $4{\times}10^3\;A/cm^2$ 조건에서 electromigration특성을 비교 평가하였다. 열처리시 OSP와 immersion Sn의 금속간화합물 성장거동은 서로 비슷한 경향을 보인 반면, ENIG는 다른 표면처리에 비해 훨씬 느린 성장거동을 보였다. electromigration특성 평가결과 열처리에 비해 금속간화합물의 성장이 가속화되나 표면처리별 경향은 유사하였고, 전자 이동 방향에 따른 음극-양극에서 금속간화합물 형성의 차이를 보이는 극성효과(polarity effect)가 나타나는 것을 알 수 있었다.

• 전자통신동향분석
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• 제35권4호
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• Journal of Welding and Joining
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• 제20권4호
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• pp.505-509
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• 2002

Pb is considered to be eliminated from solder, due to its toxicity. However, melting temperatures of most Pb-free solders are known higher than that of Sn37Pb. Therefore, there is a difficulty to apply Pb-free solders to electronic industry. Since Sn3Ag8Bi5In has relatively lower melting range as $188~200^{\circ}C$, on this study. Wettability and soldering characteristics of Sn3Ag8Bi5In solder in BGA were investigated to solve for what kind of problem. Zero cross time, wetting time, and equilibrium force of Sn3Ag8Bi5In solder for Cu and plated Cu such as Sn, Ni, and Au/Ni-plated on Cu were estimated. Plated Sn on Cu showed best wettability for zero cross time, wetting time and equilibrium farce. Shear strength of the reflowed joint with Sn3Ag8Bi5In ball in BGA was investigated. Diameter of the ball was 0.5mm, UBM(under bump metallurgy) was $Au(0.5\mu\textrm{m})Ni(5\mu\textrm{m})/Cu(18\mu\textrm{m})$ and flux was RMA type. For the reflow soldering, the peak reflow temperature was changed in the range of $220~250^{\circ}C$, and conveyor speed was 0.6m/min.. The shear strength of Sn3Ag8Bi5In ball showed similar level as those of Sn37Pb. The soldered balls are aged at $110^{\circ}C$ for 36days and their shear strengths were evaluated. The shear strength of Sn3Ag8Bi5In ball was increased from 480gf to 580gf by aging for 5 days.

• Tribology and Lubricants
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• 제28권4호
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• pp.173-177
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• 2012

We used contact resonance force microscopy (CRFM) technique to determine the quantitative elastic properties of multiple materials integrated on the sub micrometer scale. The CRFM approach measures the frequencies of an AFM cantilever's first two flexural resonances while in contact with a material. The plain strain modulus of an unknown or test material can be obtained by comparing the resonant spectrum of the test material to that of a reference material. In this study we examined the following bumping materials for flip chip by using copper electrode as a reference material: NiP, Solder (Sn-Au-Cu alloy) and under filled epoxy. Data were analyzed by conventional beam dynamics and contact dynamics. The results showed a good agreement (~15% difference) with corresponding values determined by nanoindentaion. These results provide insight into the use of CRFM methods to attain reliable and accurate measurements of elastic properties of materials on the nanoscale.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• 한국표면공학회지
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• 제48권4호
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• pp.131-135
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• 2015

We investigated the surface morphology and the change of Ag concentration for SnAg electrodeposits according to the current density using labmade and commercial plating solutions. The concentration of Ag in the SnAg electrodeposits decreased with increasing the current density. The Ag concentrations at the conditions of over $50mA/cm^2$ were below 3 wt% and the surface was relatively smooth. Cu pillar bump was fabricated by using SnAg electroplating, and it was reflowed at $240^{\circ}C$ for 90 sec. The cross-sectional microstructure was investigated by using EBSD measurement and it was found that the grain size of SnAg became smaller by increasing the number of reflow treatments.