• Proceedings of the Korean Society of Computer Information Conference
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• 2023.07a
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• pp.133-135
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• 2023

본 연구는 호황을 누리고 있는 e스포츠 방송 분야에서 그래픽 디자인의 중요성을 탐구한다. e스포츠 시청자에게 명확하고 매력적인 비주얼을 제공하고 선수 통계, 팀 순위, 토너먼트 일정과 같은 정보를 제공하는 효과적인 그래픽 디자인의 중요성을 강조한다. 시각적으로 매력적이고 몰입감 있는 방송을 만드는 데 도움이 되는 핵심 원칙과 전략을 식별하는 것을 제안하고 있으며, 그래픽에 대한 시청자 반응을 측정하고 문제가 될 수 있는 그래픽이 전반적인 e스포츠 경험을 방해하는지 확인하기 위해 설문 조사를 통해 분석 결과를 제시한다. 그리고 디자이너가 고려해야 할 핵심 사항에는 명확성, 일관성, 브랜딩 및 혁신이 포함되며, 이 모든 요소는 청중을 참여시키고 e스포츠 방송의 품질을 높이는 효과적인 그래픽을 만드는 데 도움이 될 수 있는 내용들을 제시한다.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.261-266
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• 2024

Although most strains of escherichia coli (E. coli) are harmless, some serotypes can cause serious food poisoning in humans. It is very difficult to eliminate E. coli from our lives. Here we show that E. coli can be eliminated by hydroxyapatite (HAp). Because HAp has a positive charge, the material and E. coli are attracted through electrostatic interactions. Additionally, because the surface of HAp is porous, it enters the pores of the HAp surface removing them from the environment. The amount of adsorption was observed to increase over time, and the zeta potential value of the material tended to be similar to that of E. coli. This phenomenon is thought to have zeta potential similar to that of E. coli as it is adsorbed onto the HAp surface over time. E. coli stained with crystal violet was spread on a glass slide and HAp porous sol powder was dropped to remove the E. coli. We expect that this analysis will open a new direction for antibacterial materials.

• Journal of Magnetics
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• v.19 no.2
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• pp.111-115
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• 2014

X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and vibrating sample magnetometry (VSM) were used to investigate the influence of Ni ions on the structural, electronic, and magnetic properties of nickel-ferrites ($Ni_xFe_{3-x}O_4$). Spinel $Ni_xFe_{3-x}O_4$ ($x{\leq}0.96$) samples were prepared as polycrystalline thin films on $Al_2O_3$ (0001) substrates, using a sol-gel method. XRD patterns of the nickel-ferrites indicate that as the Ni composition increases (x > 0.3), a structural phase transition takes place from cubic to tetragonal lattice. The XPS results imply that the Ni ions in $Ni_xFe_{3-x}O_4$ substitute for the octahedral sites of the spinel lattice, mostly with the ionic valence of +2. The minority-spin d-electrons of the $Ni^{2+}$ ions are mainly distributed below the Fermi level ($E_F$), at around 3 eV; while those of the $Fe^{2+}$ ions are distributed closer to $E_F$ (~1 eV below $E_F$). The magnetic hysteresis curves of the $Ni_xFe_{3-x}O_4$ films measured by VSM show that as x increases, the saturation magnetization ($M_s$) linearly decreases. The decreasing trend is primarily attributable to the decrease in net spin magnetic moment, by the $Ni^{2+}$ ($2{\mu}_B$) substitution for octahedral $Fe^{2+}$ ($4{\mu}_B$) site.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.95-98
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• 2013

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.

• Journal of Environmental Health Sciences
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• v.29 no.1
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• pp.51-61
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• 2003

Pollution purification using titanium dioxide (TiO$_2$) photocatalyst has attracted a great deal of attention with increasing number of relent environmental problems. Currently, the application of TiO$_2$ photocatalyst has been focused on purification and treatment of waste water. However. the use of conventional TiO$_2$ powder photocatalyst results in disadvantage of stirring during the reaction and of separation after the reaction. And the usage of artificial UV lamp has made the cost of photocatalyst treatment system high. Consequently, we herein studied the pilot-scale design to aid in optimization of the energy-saving process for more through development and reactor design by solar light/UV lamp/ TiO$_2$system. In this study, we manufactured the TiO$_2$sol by sol-gel method. According to analysis by XRD, SEM and TEM, characterization of TiO$_2$ sol were nano-size (5-6 nm) and anatase type. Inorganic binder (SiO$_2$) was added to TiO$_2$ lot to be coated for support strongly, and support of ceramic bead was used to lower separation rate that of glass bead The influences were studied of various experimental parameters such as TiO$_2$ quantity, pH, flow rate. additives, pollutants concentration, climate condition and reflection plate by means of reaction time of the main chararteristics of the obtained materials. In water treatment system, variable realtor as solar light/ or UV lamp according to climate condition such as sunny and cloudy days treated the phenol and E-coli(Escherichia coli) effectively.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.385-392
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• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.128-128
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• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.147-150
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• 2008

Multiple ZnO nanorod device detecting $NO_2$ gas was fabricated by sol-gel growth method and gas response characteristics were measured as a chemical gas sensor. The device is mainly composed of sensing electrode and sensing nano material. To acquire high sensitivity of the device for $NO_2$ gas it was heated by a heat chuck up to $400^{\circ}C$ The sensing part was easily made using the CMOS compatible process, for example, the large area and low temperature nano material growth process, etc. The sensors were successfully demonstrated and showed high sensitive response for $NO_2$ gas sensing.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².