Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

졸-겔 공법으로 제작된 SnO2 박막 트랜지스터의 광전기적 특성

  • Lee, Changmin (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Jang, Jaewon (School of Electronic and Electrical Engineering, Kyungpook National University)
  • 이창민 (경북대학교 IT 대학 전기전자공학부) ;
  • 장재원 (경북대학교 IT 대학 전기전자공학부)
  • Received : 2020.09.03
  • Accepted : 2020.09.09
  • Published : 2020.09.30
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Abstract

In this study, a highly crystalline SnO2 thin film was formed using a sol-gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W-1, and photosensitivity of 4.67 × 102.

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References

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