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http://dx.doi.org/10.5012/bkcs.2013.34.1.95

Temperature-dependent Photoluminescence Study on Aluminum-doped Nanocrystalline ZnO Thin Films by Sol-gel Dip-coating Method  

Nam, Giwoong (Department of Nano Engineering, Inje University)
Lee, Sang-Heon (School of Chemical Engineering, Yeungnam University)
So, Wonshoup (School of Chemical Engineering, Yeungnam University)
Yoon, Hyunsik (Department of Nano Engineering, Inje University)
Park, Hyunggil (Department of Nano Engineering, Inje University)
Kim, Young Gue (Department of Nano Engineering, Inje University)
Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Kim, Min Su (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Jung, Jae Hak (Department of Nano Engineering, Inje University)
Lee, Jewon (Department of Nano Engineering, Inje University)
Kim, Yangsoo (Department of Nano Engineering, Inje University)
Leem, Jae-Young (Department of Nano Engineering, Inje University)
Publication Information
Bulletin of the Korean Chemical Society / v.34, no.1, 2013 , pp. 95-98 More about this Journal
Abstract
The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.
Keywords
II-VI; Luminescence;
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