• 한국안전학회지
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• 제13권1호
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• pp.85-91
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• 1998

Sol-gel derived silica films were prepared by dip-coating onto polymethylmethacylate with Tetraethoxysilane(TEOS) as starting materials. Film properties such as viscosity and thickness were investigated as a function of dip speed, waterprecursor ratio, sol aging time. IR spectra of the gel films prepared from TEOS at various R are given. At small values of R the absorption peaks assignable to C-H vibration in $-OC_2H_5$ groups are observed around 3000 and 1500-1300 $cm^{-1}$. These bands indicate that the -$-OC_2H_5$ groups are retained in the gel at small values of R because of incomplete hydrolysis of TEOS. Film behaviour was interpreted in terms of the dependence of hydrolysis and condensation rates on the interplay between sol pH and waterprecursor ratio. Film thickness was found to increase by approximately a factor of two as waterprecursor ratio increased from two to six. Film thickness also increased with sol prepolymerization time. Surface quality was correlated with processing conditions.

• 한국세라믹학회지
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• 제34권6호
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• pp.611-619
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• 1997

Optimal Mullite sol was synthesized by sol-gel process using Aluminium sec-butoxide(ASB), Tetraethoxysilane(TEOS) and then, Mullite films were dip-coated with various holding time in sol bath and heat-treated at 130$0^{\circ}C$ above for crystallization. The thickness of coated film increased linearly with holding time in sol bath and average pore size was controllable within 20~30$\AA$.

• 한국정보통신학회논문지
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• 제9권7호
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• pp.1491-1496
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• 2005

[ $Pb_{0.72}La_{0.28}TiO_3$ ] (PLT(28)) 박막을 sol-gel 법을 이용하여 제작한 후, 그 특성을 조사하여 ULSI DRAM 의 캐패시터 절연막으로서의 적용 가능성을 연구하였다. Sol-gel 법의 출발 물질로는 acetate 계를 사용하였다. TGA-DTA 분석을 통하여 PLT(28) 박막의 sol-gel 법에 의한 공정 조건을 확립하였다. 매 coating 후 $350^{\circ}C$ 에서 drying 하고, 마지막으로 $650^{\circ}C$ 에서 annealing 하여 $100\%$ perovskite 구조를 가지는 치밀하고 crack 이 없는 PLT(28) 박막을 얻었다. $Pt/Ti/SiO_2/Si$ 기판 위에 PLT(28) 박막을 형성하여 전기적 특성을 측정하였다. 그 결과 유전 상수와 누설전류밀도가 각각 936 과 $1.1{\mu}A/cm^2$ 으로 측정되었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.865-868
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• 2005

$Pb_{0.72}La_{0.28}TiO_3$ (PLT(28)) 박막을 sol-gel 법을 이용하여 제작한 후, 그 특성을 조사하여 ULSI DRAM 의 캐패시터 절연막으로서의 적용 가능성을 연구하였다. Sol-gel 법의 출발 물질로는 acetate계를 사용하였다. TGA-DTA 분석을 통하여 PLT(28) 박막의 sol-gel 법에 의한 공정 조건을 확립하였다. 매 coating 후 350$^{\circ}C$에서 drying 하고, 마지막으로 650$^{\circ}C$에서 annealing 하여 100% perovskite 구조를 가지는 치밀하고 crack 이 없는 PLT(28) 박막을 얻었다. Pt/Ti/SiO$_2$/Si 기판 위에 PLT(28) 박막을 형성하여 전기적 특성을 측정하였다. 그 결과 유전 상수와 누설전류밀도가 각각 936 과 1.1${\mu}$A/cm$^2$ 으로 측정되었다.

• 센서학회지
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• 제28권5호
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• Journal of Information Display
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• 제10권1호
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• pp.24-27
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• 2009

A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

• Journal of Information Display
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• 제9권3호
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.527-531
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• 2016

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

• 센서학회지
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• 제19권3호
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• 상하수도학회지
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• 제13권3호
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• pp.101-106
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• 1999

This research aims to compare immobilized catalysts prepared by various methods and determine suitable $TiO_2$ catalyst for water purification. Sol-gel method by Anderson and powder coation method by Tanaka ate famous in the methods to immobilize catalyst. Therefore, the $TiO_2$ catalyst for this research was prepared by sol-gel method and powder coating method. Its structure was tested by X-ray diffractometer (XRD), Scanning electron microseope (SEM). Durability of a catalyst-support couple in an solution was investigated. too. Experimental results were summarized as following; i) Optimum ratio of Ti : $H_2O$ : $H^+$ to obtain stable sol was 1 : 10 : 0.1 and the XRD patterns of $TiO_2$ film immobilized by sol-gel method which were fired at $700^{\circ}C$ showed that the catalyst had an anatase structure. ii) The particle size of $TiO_2$ prepared by sol-gel method was less than $5{\mu}$, but it was observed that coated side was not unifiom. iii) Sol-gel method was very effective to obtain $TiO_2$ catalyst of thin film, but spreadability and durability of a catalyst-support couple in a solution were than $TiO_2$ film immobilized by powder coating method. iv) The particle size of $TiO_2$ immobilized by powder coating method was a little larger than it prepared by sol-gel method, but spreadability and uniformity of $TiO_2$ film and durability of a catalyst-support couple in a solution were better than it immobilized by sol-gel method.