References
- S. H. Park, K. A. Cho, H. G. Oh, and S. S. Kim J. Korean Inst. Electr. Electron. Mater. Eng., 29, 120 (2016). [DOI: http://dx.doi.org/10.4313/JKEM.2016.29.2.120]
- G. Adamopoulos, S. Thomas, P. H. Wobkenberg, D. D. C. Bradley, M. A. McLachlan, and T. D. Anthopoulos, Adv. Mater., 23, 1894 (2011). [DOI: http://dx.doi.org/10.1002/adma.201003935]
- J. Jang, R. Kitsomboonloha, S. L. Swisher, E. S. Park, H. Kang, and V. Subramanian, Adv. Mater., 25, 1042 (2013). [DOI: http://dx.doi.org/10.1002/adma.201202997]
- J. Jang, H. Kang, H.C.N. Chakravarthula, and V. Subramanian, Advanced Electronics Materials, 1 (2015). [DOI: ttp://dx.doi.org/10.1002/aelm.201500086]
- E. Fortin and F. L. Weichman, Can. J. Phy., 44, 1551 (1966). [DOI: http://dx.doi.org/10.1139/p66-128]
- B. Balamurugan and B. R. Mehta, Thin Solid Films, 396, 90 (2001). [DOI: http://dx.doi.org/10.1016/S0040-6090(01)01216-0]
- J. H. Park and K. Natesan, Oxid. Met., 39, 411 (1993). [DOI: http://dx.doi.org/10.1007/BF00664664]
- Z. Zang, A. Nakamura, and J. Temmyo, Mater. Lett., 92, 188 (2013). [DOI: http://dx.doi.org/10.1016/j.matlet.2012.10.083]
- K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Phys. Status Solidi A, 206, 2192 (2009). [DOI: http://dx.doi.org/10.1002/pssa.200881795]
- B. S. Ong, C. Li, Y. Li, Y. Wu, and R. J. Loutfy, J. Am. Chem. Soc., 129, 2750 (2008). [DOI: http://dx.doi.org/10.1021/ja068876e]
- J. Jang, S. Chung, H. Kang, and V. Subramanian, Thin Solid Films, 600, 157 (2016). [DOI: http://dx.doi.org/10.1016/j.tsf.2016.01.036]
- C. Wang, X. Q. Fu, X. Y. Xue, Y. G. Wang, and T. H. Wang, Nanotechnology, 17, 145506 (2007). [DOI: http://dx.doi.org/10.1088/0957-4484/18/14/145506]
- H. T. Hsueh, T. H. Hsueh, S. J. Chang, F. Y. Hung, T. Y. Tasi, W. Y. Weng, C. L. Hsu, and B. T. Dai, Sens, Actuators B, 156, 906 (2011). [DOI: http://dx.doi.org/10.1016/j.snb.2011.03.004]