1 |
S. K. Dey and J. J. Lee, 'Cubic Paraelectric (Nonferroelectric) Perovskite PLT Thin Films with High Permittivity for ULSI DRAM;s and Decoupling Capacitors', IEEE Transactions on Electron Devices, 39, pp. 1607-1612 (1992)
DOI
ScienceOn
|
2 |
岡田勝,'MOCVD法による强誘電體薄膜の形成', 月刊 Semiconductor World, pp. 125-129 (1992)
|
3 |
A. F. Tasch and L. H. Parker, 'Memory Cell and Technology Issues for 64M and 256M Bit One-Transistor Cell MOS DRAMs', Proceedings of The IEEE, 77, 3, pp. 374-386 (1989)
|
4 |
J. Carrano, C. Sudhama, J. Lee, A. Tasch and W. Miller, 'Electrical and Reliablity Characteristics of PZT Ferroelectric Thin Films for DRAM Applications', IEDM Tech. Dig., pp. 255-258 (1989)
|
5 |
Reza Moazzami and Chenming Hu, 'Electrical Characteristics of Ferroelectric PZT Thin Films for DRAM Applications', IEEE Transactions on Electron Devices, 39, pp. 2044-2045 (1992)
DOI
ScienceOn
|
6 |
W. D. Kingery, H. K. Bowen and D. R. Uhlman, Introduction to Ceramics : 2nd ed., John Wiley & Sons, Inc., New York, pp. 937 (1976)
|
7 |
C. J. Brinker and G. W. Scherer, Sol-Gel Science, Academic Press, pp. 1-10 (1990)
|
8 |
A. F. Tasch and L. H. Parker, 'Ferroelectric Materials for 64Mb and 256Mb DRAMs', IEEE Circuits and Devices Magazine, pp. 17-26 (1990)
|
9 |
H. Hu and S. B. Krupanidhi, 'Electrical Characterization of PZT Thin Films', Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics, pp. 440-443 (1992)
|
10 |
武田英次, 鳥居和功, '强誘電體 薄膜 集積化 技術', Science Forum, pp. 217-229 (1992)
|
11 |
Yuhuan Xu, Ferroelectric Materials and Their Application, University of California, pp. 163-168, (1991)
|