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http://dx.doi.org/10.4313/JKEM.2016.29.9.527

Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistors  

Jang, Jaewon (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.9, 2016 , pp. 527-531 More about this Journal
Abstract
In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.
Keywords
Sol-gel process; CuO; TFT; Ambient;
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