• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.956-960
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• 2010

CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

• 한국재료학회지
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• 제18권7호
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• 한국재료학회지
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• 제23권2호
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• pp.143-148
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• 2013

Well-distributed $SnO_2$-Sn-$Ag_3Sn$ nanoparticles embedded in carbon nanofibers were fabricated using a co-electrospinning method, which is set up with two coaxial capillaries. Their formation mechanisms were successfully demonstrated. The structural, morphological, and chemical compositional properties were investigated by field-emission scanning electron spectroscopy (FESEM), bright-field transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In particular, to obtain well-distributed $SnO_2$ and Sn and $Ag_3Sn$ nanoparticles in carbon nanofibers, the relative molar ratios of the Ag precursor to the Sn precursor including 7 wt% polyacrylonitrile (PAN) were controlled at 0.1, 0.2, and 0.3. The FESEM, bright-field TEM, XRD, and XPS results show that the nanoparticles consisting of $SnO_2$-Sn-$Ag_3Sn$ phases were in the range of ~4 nm-6 nm for sample A, ~5 nm-15 nm for sample B, ~9 nm-22 nm for sample C. In particular, for sample A, the nanoparticles were uniformly grown in the carbon nanofibers. Furthermore, when the amount of the Ag precursor and the Sn precursor was increased, the inorganic nanofibers consisting of the $SnO_2$-Sn-$Ag_3Sn$ nanoparticles were formed due to the decreased amount of the carbon nanofibers. Thus, well-distributed nanoparticles embedded in the carbon nanofibers were successfully synthesized at the optimum molar ratio (0.1) of the Ag precursor to the Sn precursor after calcination of $800^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• 제12권2호
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• pp.173-187
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• 2021

In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn₂SnO₄-SnO₂ and graphene (ZnO-Zn₂SnO₄-SnO₂/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn₂SnO₄-SnO₂/Gr/CPE, and the impact of scan rate and the concentration of H⁺ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn₂SnO₄-SnO₂/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

• 한국분말재료학회지
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• 제14권5호
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• pp.287-291
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• 2007

Oxidation behavior and microstructural characteristics of nano-sized Sn powder were studied. DTA-TG analysis showed that the Sn powder exhibited an endothermic peak at $227^{\circ}C$ and exothermic peak at $560^{\circ}C$ with an increase in weight. Based on the phase diagram consideration of Sn-O system and XRD analysis, it was interpreted that the first peak was for the melting of Sn powder and the second peak resulted from the formation of $SnO_2$ phase. Microstructural observation revealed that the $SnO_2$ powder, heated to $1000^{\circ}C$ under air atmosphere, consisted of agglomerates with large particle size due to the melting of Sn powder during heat treatment. Finally, fine $SnO_2$ powders with an average size of 50nm can be fabricated by controlled heat treatment and ultrasonic milling process.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.81-85
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• 2017

$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

• 청정기술
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• 제16권1호
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• pp.46-50
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• 2010

본 연구에서는 새집증후군의 대표적 원인물질인 수중 부유 톨루엔을 효율적으로 분해하기 위해 Sn원소를 티타니아 골격에 삽입하여 고온 고압에서 용매열(solvothermal)법으로 Sn-$TiO_2$ 나노 광촉매를 제조하였다. 제조한 Sn-$TiO_2$의 물리적 특성은 X-ray 회절분석법, 투과전자현미경, 주사전자현미경, 자외선-가시선 분광 광도계를 통하여 분석하였다. Sn-$TiO_2$의 광촉매 활성은 수중 부유 톨루엔 광분해반응을 통해 확인하였고, 반응 전후의 수중 부유 톨루엔 농도는 자외선-가시선 분광광도계를 이용하여 측정하였다. 수중 부유 톨루엔 광분해반응 결과 0.01 mol% Sn-$TiO_2$촉매가 순수 $TiO_2$ (anatase) 광촉매보다 활성이 향상되었으며. 500ppm 수중 부유 톨루엔은 300분 이내에 완전히 분해되었다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.41-44
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• 1997

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.

• 한국결정성장학회지
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• 제31권4호
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• pp.154-158
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• 2021

550 nm 파장대에서 O₂/Ar+O₂ 혼합기체 농도비가 0에서 7.9 %로 변화 시 Mn 도핑된 SnO₂ 투명전도막의 투과율은 80.9에서 85.4 %로 밴드갭 에너지는 3.0에서 3.6 eV로 증가하였다. 비저항은 O₂/Ar+O₂ 혼합기체 농도비가 0에서 2.7 %까지 증가 시 3.21 Ω·cm에서 0.03 Ω·cm으로 감소하다 이후 7.9 %로 증가 시에는, 52.0 Ω·cm으로 급격하게 상승하였다. XPS 분석결과 혼합기체 O₂/Ar+O₂에서 O₂ 농도의 증가로 Sn_3d5/2의 결합에너지가 486.40에서 486.58 eV로, O_1s의 결합에너지도 530.20에서 530.34 eV로 조금 변화하였다. 따라서 스파터링 방법으로 제조한 Mn 도핑된 SnO₂ 투명전도막에서 O₂ 농도변화에 따라 SnO와 SnO₂ 2개의 상이 공존하는 것을 확인하였다.