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http://dx.doi.org/10.3740/MRSK.2008.18.7.373

Synthesis and Properties of Ba(Ti,Sn)O3 Films by E-Beam Evaporation  

Park, Sang-Shik (Dept. of Advanced Materials Engineering, Kyungpook National University)
Publication Information
Korean Journal of Materials Research / v.18, no.7, 2008 , pp. 373-378 More about this Journal
Abstract
$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.
Keywords
$Ba(Ti,Sn)O_3$ film; MLCC; evaporation; vapor pressure;
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1 Z. Wei, M. Noda and M. Okuyama, Jpn. J. Appl. Phys., 41, 6619 (2002)   DOI
2 S. W. Ding, J. Chai and C. Y. Feng, Mater. Lett., 60, 3241 (2006)   DOI   ScienceOn
3 A. Kumar, B. P. Singh, R. N. P. Choudhary and A. K. Thakur, Mater. Lett., 59, 1880 (2005)   DOI   ScienceOn
4 M. Randall, in proceedings of the CARTS USA 2000 symposium (Huntington Beach, CA, March, 2000), 195 (2000)
5 V. Mueller, L. Jager, H. Beige, H. P. Abicht and T. Muller, Solid State Commun., 129, 757 (2004)   DOI   ScienceOn
6 A. E. Feuersanger, A. K. Hagenlocher and A. L. Solomon, J. Electrochem. Soc., 111, 1387 (1964)   DOI
7 S. S. Park, J. H. Ha and H. N. Wadley, Integrated Ferroelectrics, 99, 105 (2008)   DOI   ScienceOn
8 W. Bak, C. Kajtoch and F. Starzyk, Mater. Sci. Eng., B100, 9 (2003)   DOI   ScienceOn
9 R. Steinhausen, A. Kouvatov, H. Beige, H. T. Langhammer and H. P. Abicht, J. Eur. Ceram. Soc., 24, 1677 (2004)   DOI   ScienceOn
10 S. Mustofa, T. Araki, T. Furusawa, M. Nishida and T. Hino, Mater. Sci. and Eng., B103, 128 (2003)   DOI   ScienceOn
11 R. A. Zarate, A. L. Kabrera, U. G. Volkman and V. Fuenzalida, J. Phys. Chem. Solids, 59, 1639 (1998)   DOI   ScienceOn
12 C. Kajtoch, Mater. Sci. Eng., B64, 25 (2003)   DOI   ScienceOn
13 G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri and A. I. Kingon, J. Appl. Phys., 82, 2359 (1997)   DOI   ScienceOn
14 N. Shu, Ashok Kumar, M. R. Alam, H. L. Chan and Q. You, Appl. Surf. Sci., 109, 366 (1997)   DOI   ScienceOn
15 H. Kishi, Y. Mizuno and H. Chazono, Jpn. J. Appl. Phys., 42(1), 1 (2003)   DOI
16 Y. Sakabe, Y. Takeshima and K. Tanaka, J. Electroceram., 3, 115 (1999)   DOI   ScienceOn
17 Y. Sakabe, Ceramics (in Japan), 36, 407 (2001)
18 P. C. Joshi and S. B. Desu, Thin Solid Films, 300, 289 (1997)   DOI   ScienceOn
19 S. Markovic, M. Mitric, N. Cvjeticanin and D Uskokovic, J. Eur. Ceram. Soc., 27, 505 (2007)   DOI   ScienceOn