• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.3
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• pp.48-54
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• 2000

In this study the characteristics of chip formation of the cold drawn Bi-S free machining steels were assessed. And for comparison those of the cold drawn Pb-S free machining steel the hot rolled low carbon steel which has MnS as free machining inclusions and the conventional steels were also investigated. During chip formation the cold drawn free machining steels show relatively little change in thickness and width of chip compare to those of the conventional carbon steels. And a single parameter which indicates the degree of deformation during chip formation chip cross-section area ratio is introduced. The chip cross-section area ratio is defined as chip cross-section area is divided by undeformed chip cross-section area. The variational patters of the chip cross-section area ratio of the materials cut are similar to those of the shear strain values. The shear stress however seems to be dependent on the carbon content of the materials. The cold drawn Bi-S and Pb-S steels show nearly the same chip forming behaviors and the energy consumed during chip formation is almost same. A low carbon steel without free machining aids shows poor chip breakability due to its high ductility. By introducing a small amount of free machining inclusions such as MnS Bi, Pb or merely increasing carbon content the chip breakability improves significantly.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.351-356
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• 1999

In this study, the characteristics of chip formation of the cold drawn Bi-S free machining steels were assessed. And for comparison, those of the cold drawn Pb-S free machining steel, the hot rolled low carbon steel which has MnS as free machining inclusions and the conventional steels were also investigated. During chip formation, the cold drawn free machining steels show relatively little change in thickness and width of chip compare to those of the conventional carbon steels. And a single parameter which indicates the degree of deformation during chip formation, 'chip cross-section area ratio' is introduced. The chip cross-section area. The variational patterns of cross-section area is divided by undeformed chip cross-section area. The variational patterns of the chip cross-section area ratio of the materials cut are similar to those of the shear strain values. The shear stress, however, seems to be dependent on the carbon content of the materials. The cold drawn BiS and Pb-S steels show nearly the same chip forming behaviors and the energy consumed during chip formation is almost same. A low carbon steel without free machining aids shows poor chip breakability due to its high ductility. By introducing a small amount of non-metallic inclusions such as MnS, Bi, Pb or merely increasing carbon content the chip breakability improves significantly.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.7
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• pp.42-48
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• 1994

In this paper, a low power and high speed flash Analog-to-Digital Converter using current-mode concept is proposed. Current-mode approach offers a number of advantages over conventional voltage-mode approach, such as lower power consumption small chip area improved accuracy etc. Rescently this concept was applied to algorithmic A/D Converter. But, its conversion speed is limited to medium speed. Consequently this converter is not applicable to the high speed signal processing system. This ADC is fabricated in 1.2um double metal CMOS standard process. This ADC's conversion time is measured to be 7MHz, and power consumption is 2.0mW, and differential nonlinearity is less than 1.14LSB and total harmonic distortion is -50dB. The active area of analog chip is about 350 x 550u$m^2$. The proposed ADC seems suitable for a single chip design of digital signal processing system required high conversion speed, high resolution small chip area and low power consumption.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.8
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• pp.1037-1043
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• 2020

This paper presents a new Physical Unclonable Function (PUF) security chip based on a low-cost, small-area, and low-power semiconductor process for IoT devices. The proposed security circuit has multiple challenge-to-response pairs (CRP) by adding the switching circuit to the cross-coupled path between two inverters of the SRAM structure and applying the challenge input. As a result, the proposed structure has multiple CRPs while maintaining the advantages of fast operating speed and small area per bit of the conventional SRAM based PUF security chip. In order to verify the performance, the proposed switched SRAM based PUF security chip with a core area of 0.095㎟ was implemented in a 180nm CMOS process. The measurement results of the implemented PUF show 4096-bit number of CRPs, intra-chip Hamming Distance (HD) of 0, and inter-chip HD of 0.4052.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.135-144
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• 2003

This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.785-792
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• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.11
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• pp.1641-1646
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• 2013

Control voltage for baseband channel selection filter to select one of communication channels can be easily fluctuated according to external noise or variation of fabrication. In this paper, we design a voltage regulator with small chip area to keep control voltage constantly using current comparative method. Cut-off frequency of channel selection filter is automatically controlled by detecting current flow using the proposed voltage regulator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.12
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• pp.1710-1715
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• 2014

In this paper, we propose a novel on-chip test logic for TSV fault detection in 3-dimensional integrated circuits. The proposed logic called OTT realizes the input signal delay-based TSV test method introduced earlier. OTT only includes one F/F, two MUXs, and some additional logic for signal delay. Thus, it requires small silicon area suitable for TSV testing. Both pre-bond and post-bond TSV tests are able to use OTT for short or open fault as well as small delay fault detection.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1755-1762
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• 2016

In this paper, a small areal dual-output SC(switched capacitor) DC-DC converter with a improved range of an input voltage is presented. The conventional SC DC-DC converter has an advantage of low cost and small chip area. But, it has a narrow input voltage range to convert efficiently. Also, it has a lager chip area and a lower power efficiency from multiple outputs. The proposed SC DC-DC converter improves the power efficiency by using the capacitor array structure which efficiently converts the voltage according to the input voltage. By sharing two switch array, it reduces the number of switches and capacitors from 32 to 25. The proposed SC DC-DC converter was manufactured in a $0.18{\mu}m$ CMOS process. In the simulation, the range of the input voltage is 0.7~ 1.8V, the max. power efficiency is 90%, and the chip area is $0.255mm^2$.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.