• Title/Summary/Keyword: Single-chip

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A Scalable Word-based RSA Cryptoprocessor with PCI Interface Using Pseudo Carry Look-ahead Adder (가상 캐리 예측 덧셈기와 PCI 인터페이스를 갖는 분할형 워드 기반 RSA 암호 칩의 설계)

  • Gwon, Taek-Won;Choe, Jun-Rim
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.8
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    • pp.34-41
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    • 2002
  • This paper describes a scalable implementation method of a word-based RSA cryptoprocessor using pseudo carry look-ahead adder The basic organization of the modular multiplier consists of two layers of carry-save adders (CSA) and a reduced carry generation and Propagation scheme called the pseudo carry look-ahead adder for the high-speed final addition. The proposed modular multiplier does not need complicated shift and alignment blocks to generate the next word at each clock cycle. Therefore, the proposed architecture reduces the hardware resources and speeds up the modular computation. We implemented a single-chip 1024-bit RSA cryptoprocessor based on the word-based modular multiplier with 256 datapaths in 0.5${\mu}{\textrm}{m}$ SOG technology after verifying the proposed architectures using FPGA with PCI bus.

A 800MHz~5.8GHz Wideband CMOS Low-Noise Amplifier (800MHz~5.8GHz 광대역 CMOS 저잡음 증폭기 설계)

  • Kim, Hye-Won;Tak, Ji-Young;Lee, Jin-Ju;Shin, Ji-Hye;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.45-51
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    • 2011
  • This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

A Multi-Channel Gigabit CMOS Optical Transmitter Circuit (멀티채널 기가비트 CMOS 광 송신기 회로)

  • Tak, Ji-Young;Kim, Hye-Won;Shin, Ji-Hye;Lee, Jin-Ju;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.52-57
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    • 2011
  • This paper presents a 4-channel optical transmitter circuit realized in a $0.18{\mu}m$ CMOS technology for high-speed digital interface. Particularly, the VCSEL driver exploits the feed-forward technique, and the pre-amplifier employs the pulse-width control. Thus, the optical transmitter operates at the bias current up to 4mA and the modulation current from $2{\sim}8mA_{pp}$. with the pulse-width distortion compensated effectively. The 4-channel optical transmitter array chip occupies the area of $1.0{\times}1.7mm^2$ and dissipates 35mW per channel at maximum current operations from a single 1.8V supply.

Bidirectional Charging/Discharging Digital Control System for Eco-friendly Capacitor Energy Storage Device Implemented by TMS320F28335 chip (TMS320F28335로 구현한 친환경 커패시터 전력저장장치의 양방향 디지털 제어 충/방전 시스템)

  • Lee, Jung-Im;Lee, Jong-Hyun;Jung, An-Yoel;Lee, Choon-Ho;Park, Joung-Hu;Jeon, Hee-Jong
    • The Transactions of the Korean Institute of Power Electronics
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    • v.15 no.3
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    • pp.188-198
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    • 2010
  • Recently, as the demand of the environmental-friendly energy storage system such as an electric double-layer condenser increases, that of the bidirectional charger/discharger for the systems also increases. However, when charging/discharging mode-change occurs, the charger/discharger employing a bi-directional DC-DC converter with a commercialized analog controller has a complex circuit scheme, and a poor transient response. On the other hand, if a single digital controller is used for the bi-directional mode, the system performances can be improved by application of an advanced power-processing algorithm. In the paper, an environmental-friendly power storage systems including an Electric Double Layer Capacitor(EDLC) banks were developed with a bi-directional buck-boost converter and a digital signal processor (TMS320F28335). A simulation test-bed was realized and tested by MATLAB Simulink, and the hardware experiment was performed which shows that the dynamic response was improved such as the simulation results.

A High-speed St Low power Design Technique for Open Loop 2-step ADC (개방루프를 이용한 고속 저전력 2스텝 ADC 설계 기법)

  • 박선재;구자현;윤재윤;임신일;강성모;김석기
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.4A
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    • pp.439-446
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    • 2004
  • This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.

Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching Process of Low-K Methylsilsequioxane Insulator Film using $CF_4$ and $O_2$ ($CF_4$$O_2$를 이용한 저유전율 물질인 Methylsilsequioxane의 RIE와 MERIE 공정)

  • Jung, Do-Hyun;Lee, Yong-Soo;Lee, Kil-Hun;Kim, Kwang-Hun;Lee, Hee-Woo;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1491-1493
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    • 2000
  • Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

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Relation Between Magnetization Easy Axis and Anisotropic Magnetoresistance in Permalloy Films (퍼멀로이 박막의 자화 용이축과 자기저항 변화와의 상관관계에 대한 연구)

  • Hwang, Tae-Jong;Ryu, Yeung-Shik;Kwon, Jin-Hyuk;Kim, Ki-Hyeon;Kim, Dong-Ho
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.28-31
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    • 2008
  • We studied the effect of easy magnetization axis orientation with respect to the strip direction by measuring the magnetoresistance(MR), the magneto-optic Kerr effect(MOKE), and real-time domain evolution. The five strips were patterned on a single chip with the easy axis orientation of each strip relative to the longitudinal direction by around $0^{\circ}$, $18^{\circ}$, $36^{\circ}$, $54^{\circ}$ and $72^{\circ}$, respectively. The overall shape of field dependent MR was mostly governed by the anisotropy magnetoresistnace. The relative change of the longitudinal MR was significantly increased with increasing angle between the easy axis and strip direction, whereas, the transverse MR variation rate was decreased with increasing angle. Several MR steps were observed during the magnetization reversal, and the simultaneous measurement of the MOKE and the domain images identified that the MR steps were associated with evolution of the oppositely directed magnetic domain.

The Influence of Noise Environment upon Voice and Data Transmission in the RF-CBTC System

  • Kim, Min-Seok;Lee, Sang-Hyeok;Lee, Jong-Woo
    • International Journal of Railway
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    • v.3 no.2
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    • pp.39-45
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    • 2010
  • The RF-CBTC (Radio Frequency-Communication Based Train Control) System is a communication system in railroad systems. The communication method of RF-CBTC system is the wireless between the wayside device and on-board device. The wayside device collects its location and speed from each train and transmits the distance from the forwarding train to the speed-limit position to it. The on-board device controlling device controls the speed optimum for the train. In the case of the RF-CBTC system used in Korea, transmission frequency is 2.4 [GHz]. It is the range of ISM(Industrial Scientific and Medical equipment) band and transmission of voice and data is performed by CDMA (Code Division Multiple Access) method. So noises are made in the AWGN (Additive White Gaussian Noise) and fading environment. Currently, the SNR (Signal to Noise Ratio) is about 20 [dB], so due to bit errors made by noises, transmission of reliable information to the train is not easy. Also, in the case that two tracks are put to a single direction, it is needed that two trains transmit reliable voice and data to a wayside device. But, by noises, it is not easy that just a train transmits reliable information. In this paper, we estimated the BER (Bit Error Rate) related to the SNR of voice and data transmission in the environment such as AWGN and fading from the RF-CBTC system using the CDMA method. Also, we supposed the SNR which is required to meet the BER standard for voice and data transmission. By increasing the processing gain that is a ratio of chip transmission to voice and data transmission, we made possible voice and data transmission from maximally two trains to a wayside device, and demonstrated it by using Matlab program.

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Design of a 6-bit 500MS/s CMOS A/D Converter with Comparator-Based Input Voltage Range Detection Circuit (비교기 기반 입력 전압범위 감지 회로를 이용한 6비트 500MS/s CMOS A/D 변환기 설계)

  • Dai, Shi;Lee, Sang Min;Yoon, Kwang Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38A no.4
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    • pp.303-309
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    • 2013
  • A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82mW with a single power supply of 1.2V and achieves 4.9 effective number of bits for input frequency up to 1MHz at 500 MS/s. Therefore it results in 4.75pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

A new continuous-time current-mode integrator for realization of low-voltage current-mode CMOS filter (저전압 전류모드 CMOS 필터 구현을 위한 새로운 연속시간 전류모드 적분기)

  • 방준호;조성익;김동용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.1068-1076
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    • 1996
  • In this paper, a new continuous-time current-mode integrator as basic building block of the low-voltage analyog current-mode active filters is proposed. Compared to the current-mode integrator which is proposed by Zele, the proposed current-mode integrator had higher unity gain frequency and output impedance in addition to lower power dissipation. And also, a current-mode third-order lowpass active filter is designed with the proposed current-mode integrator. The designed circuits are fabricated using the ORBIT's $1.2{\mu}{\textrm{m}}$ deouble-poly double-metal CMOS n-well process. The experimental results show that the filter has -3dB cutoff frequency at 44.5MHz and 3mW power dissipation with single 3.3V power supply and also $0.12mm^{2}$ chip area.

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