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A 800MHz~5.8GHz Wideband CMOS Low-Noise Amplifier  

Kim, Hye-Won (Department of Electronics Eng., Ewha Womans University)
Tak, Ji-Young (Department of Electronics Eng., Ewha Womans University)
Lee, Jin-Ju (Department of Electronics Eng., Ewha Womans University)
Shin, Ji-Hye (Department of Electronics Eng., Ewha Womans University)
Park, Sung-Min (Department of Electronics Eng., Ewha Womans University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.12, 2011 , pp. 45-51 More about this Journal
Abstract
This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.
Keywords
CMOS; LNA; noise cancellation; resistive feedback; wideband;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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