• Polymer(Korea)
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• v.28 no.5
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• pp.367-373
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• 2004

Novel non-conjugated blue light-emitting copolymers containing perylene and triazine moieties as light emitting and electron transporting units, respectively in the polymer side chain were synthesized. The resulting copolymers were soluble in most organic solvents such as chlorobenzene, THF, chloroform and benzene. The single-layered electroluminescence (EL) device consisting of indium tin oxide (ITO) /copolymer/aluminium (Al) exhibited a maximum external quantum efficiency ($0.003\%$) and a good carrier balance when the triazine content was $30\%$. In particular, the device emitted blue light (479 nm) corresponding to the emission of perylene moiety. The drive voltage was observed at 5 V and the CIE coordinate was x=0.16, y=0.17.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.260-263
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• 2013

A semiconducting single-walled carbon nanotube (SWCNT) field-effect transistor (FET) in a top-gate model was constructed. The effect of different high-${\kappa}$ dielectric materials ($Al_2O_3$, $HfO_2$ and HfSiON) and various temperatures with a wide range from 50K to 500K on the performance of such nominal device were investigated. Several key device parameters including the on/off ratio of the current, transconductance ($g_m$), subthreshold swing, and carrier mobility were used to evaluate the device performance. The simulated results fit well with the experiment results previously published.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.543-547
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• 2005

Organic electroluminescence devices were made from 1,4-bis-(9-anthrylvinyl)benzene (AVB) and 1,4-bis-(9-aminoanthryl)benzene (AAB) anthracene derivatives. Device structure was ITO/AVB/PANI(EB)/Al (multi-layer device) and ITO/AAB:DCM/Al(single-layer device). In these devices, AVB, polyaniline(emeraldine base) (PANI(EB)) and AAB were used as the emitting material. 4-(dicyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H -pyran(DCM) was used as red fluorescent dopant. We studied change of fluorescence wavelength with concentration of DCM doped in AAB. The ionization potential (IP) and optical band gap (Eg) were measured by cyclic voltammetry and UV-visible spectrum. We compared with difference of emitting wavelength between photoluminescence and electroluminescence spectrum. In case of the multi-layer device, PANI and AVB EL spectra have similar wave pattern to each PL spectrum and when PAM and AVB were used at the same time, and multi-layer device showed that a balanced recombination and radiation kom PANI and AVB. In case of the single-layer device, with the increase of DCM concentration, the blue emission decreases and red emission increases. This indicates that DCM was excited by the energy transfer from AAB to DCM or the direct recombination at the dopant sites due to carrier trapping, or both. The device with $1.0wt\%$ DCM concentration gave white light.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.181-185
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• 2006

A novel 60GHz optical carrier generator with a polarization domain-inverted structure is suggested and is demonstrated. The two arms of the Mach-Zehnder optical waveguide are periodically poled for quasi-phase velocity matching between the optical wave at 1550nm and the RF wave at 30 GHz. The center frequency of band-pass modulation and the 3 dB bandwidth of the fabricated modulator were measured to be 30.3 GHz and 5.1 GHz, respectively. Sub-carriers with the frequency difference of 60GHz waeregenerated under appropriate DC biac voltage application while the carrier was suppressed to lead to the power ratio between the modulated sub-carrier and the suppressed fundamental carrier of 28 dB, which proves that double sideband- suppressed carrier(DSB-SC) operation can be realized by the suggested single device.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.325-336
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• 2018

Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.163.1-163.1
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• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• Journal of Sensor Science and Technology
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• v.33 no.4
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Journal of electromagnetic engineering and science
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• v.4 no.3
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• pp.137-142
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• 2004

In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.