Proceeding of EDISON Challenge (EDISON SW 활용 경진대회 논문집)

Korea Institute of Science and Technology Information (한국과학기술정보연구원)
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Characterization of SWCNT Field Effect Transistor via Edison Simulation

  • Piao, Mingxing (School of Electrical Engineering, Korea University) ;
  • Lee, Sang-Jin (School of Electrical Engineering, Korea University) ;
  • Na, In-Yeob (School of Electrical Engineering, Korea University)
  • Published : 2013.04.17
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Abstract

A semiconducting single-walled carbon nanotube (SWCNT) field-effect transistor (FET) in a top-gate model was constructed. The effect of different high-${\kappa}$ dielectric materials ($Al_2O_3$, $HfO_2$ and HfSiON) and various temperatures with a wide range from 50K to 500K on the performance of such nominal device were investigated. Several key device parameters including the on/off ratio of the current, transconductance ($g_m$), subthreshold swing, and carrier mobility were used to evaluate the device performance. The simulated results fit well with the experiment results previously published.

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