• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1105-1108
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• 2005

Media service model is divided into 3 models that are Client Pull, Server Push, and IPP(Interleaving Pull & Push) model. In most single VOD(Video On Demand) environment, Client Pull model was sufficient to play the movie Because most media contents has a low bitrate and resolution. But according to an increment of the demand of the high definition media, Client Pull model is not sufficient. Parallel VOD environment is made of several of VOD servers and provides the parallel media stream simultaneously for one client. We compared and analyzed the performance of service models with respect to network delay and data size in buffer in the single and parallel VOD environment and we found that IPP service model keeps the least network delay and stable client buffer state in the parallel VOD environment.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.120-122
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• 2003

BaZrO$_3$and SrTiO$_3$(STO) thin films were Pulsed laser deposited on biaxially textured Ni and Ni-W alloy substrates to be used as single buffer layer for coated conductor. The texture of the films were analysed using the GADDS (general area detector diffraction system). Both films deposited on the metal tape were strongly (001) oriented, and in-plane textured (Δø (BZO) =9$^{\circ}$, Δø (STO) = 10$^{\circ}$).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.9
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• pp.38-45
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• 2007

With the emergence of new applications, packet classification is essential for supporting advanced internet applications, such as network security and QoS provisioning. As the packet classification on multiple-fields is a difficult and time consuming problem, internet routers need to classify incoming packet quickly into flows. In this paper, we present multi-phase packet classification architecture using an internal buffer for fast packet processing. Using internal buffer between address pair searching phase and remained fields searching phases, we can hide latency from the characteristic that search times of source and destination header fields are different. Moreover we guarantee the improvement by using single entry caching. The proposed architecture is easy to apply to different needs owing to its simplicity and generality.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.12-15
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• 2004

There are two major approaches to obtain texture template for HTS coated conductor (CC) ---IBAD and RABiTS. CC's with IBAD template showed both longer and higher Ic results so far. IBAD for CC began with YSZ, the processing of which is very slow compared to other processings needed for the fabrication of CC. Because of this very slow processing speed, IBAD with other materials such as Gd$_2$Zr$_2$O$_{7}$(GZO) and MgO have been developed. The processings of IBAD-GZO and IBAD-MgO are known to be up to 3times and 100 times. respectively, as fast as the processing of IBAD-YSZ. IBAD-MgO is very attractive in that the processing is very fast. IBAD-MgO also needs additional buffer layer(s). Many materials are being investigated to be used as a buffer layer on top of the MgO. BaZrO$_3$ (BZO) is a good candidate as the buffer layer on top of the IBAD-MgO because it is chemically stable and does not react with YBCO at high temperatures. It also has good lattice match with MgO. The BZO film has been deposited on single crystal MgO, and YBCO film was deposited on BZO/MgO to investigate the possibility of using BZO as both the buffer and capping layer of the CC.C.

• Journal of Internet Computing and Services
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• v.10 no.4
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• pp.199-211
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• 2009

Recent advancements in wireless networks have enabled support for mobile applications to transfer data over heterogeneous wireless paths in parallel using data striping technique [2]. Traditionally, high performance data transfer requires tuning of multiple TCP sockets, at sender's end, based on bandwidth delay product (BDP). Moreover, traditional techniques like Automatic TCP Buffer Tuning (ATBT), which balance memory and fulfill network demand, is designed for wired infrastructure assuming single flow on a single socket. Hence, in this paper we propose a buffer tuning technique at senders end designed to ensure high performance data transfer by striping data at transport layer across heterogeneous wireless paths. Our mechanism has the capability to become a resource management system for transport layer connections running on multi-homed mobile host supporting features for wireless link i.e. mobility, bandwidth fluctuations, link level losses. We show that our proposed mechanism performs better than ATBT, in efficiently utilizing memory and achieving aggregate throughput.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.1
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• pp.71-76
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• 2022

Buffer cache bridges the performance gap between memory and storage, but its effectiveness is limited due to periodic flush, performed to prevent data loss in smartphones. This paper shows that selective flushing technique with small persistent memory can reduce the flushing overhead of smartphone buffer cache significantly. This is due to our I/O analysis of smartphone applications in that a certain hot data account for most of file writes, while a large proportion of file data incurs single-writes. The proposed selective flushing policy performs flushing to persistent memory for frequently updated data, and storage flushing is performed only for single-write data. This eliminates storage write traffic and also improves the space efficiency of persistent memory. Simulations with popular smartphone application I/O traces show that the proposed policy reduces write traffic to storage by 24.8% on average and up to 37.8%.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.127-133
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• 2006

Recent studies demonstrated the ability of carbon nanotube (CNT) to promote electron transfer reactions of important compounds and to impart higher stability onto electrochemical sensors. CNT-based sensors measured by hydroxyl radical concentration or pH value suggest great promise for biosensors. This paper describes a new method for fabricating a very simple and inexpensive pH sensor compose of single walled-carbon nanotubes (SW-CNTs) using an ultra-precision spray. CNT-based sensor shows pH sensitivity in buffer solution at different pH range. Our experimental results show the sensor responses to pH buffer solution and the conductance of depends on the pH values. These results support application possibility of SW-CNTs based pH sensor for mass production.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.5
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• pp.1135-1140
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• 2011

This paper proposes a DTMB deinterleaver structure to reduce the SDRAM power consumption with buffer conversion and the single pointer-register structure. The DTMB deinterleaver with deep interleaving for higher performance consists of long delay buffers allocated on SDRAM. The conventional structure activates a new SDRAM row almost everytime when it reads and writes a datum. In the proposed structure, long buffers are transformed into several short buffers so that the number of row activations is reduced. The single pointer-register structure solves the problem of many pointer-registers. The experimental results show that the SDRAM power consumption can be reduced to around 37% with slight logic area reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.