• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.33-59
• /
• 2000

Demonstrated uniform MR and resistance across 6 inch wafer, Demonstrated successful integration of MTJ and CMOS, Measured address access time of 8ns and read cycle time of 18ns for 256${\times}$2 arrays at 3.0V using a single transistor and MTJ for a cell

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.39 no.1
• /
• pp.31-36
• /
• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

• Development and Reproduction
• /
• v.21 no.3
• /
• pp.317-325
• /
• 2017

Direct communication between neighboring cells through connexin (Cx)-based gap junction is a crucial biological manner to regulate functions of a tissue consisting of multi-cell types. The present research evaluated expressional changes of Cx isoforms in the caput epididymis of adult rat exposed to estradiol benzoate (EB) or flutamide (Flu) at the early postnatal age. A single subcutaneous administration of EB at a low-dose [$0.015{\mu}g/kg$ body weight (BW)] or a high-dose ($1.5{\mu}g/kg\;BW$) or Flu at a low-dose ($500{\mu}g/kg\;BW$) or a high-dose (5 mg/kg BW) was performed to an animal at 1 week of age. Quantitative real-time PCR analysis was employed to determine expressional changes of Cx isoforms. The transcript levels of Cxs30.3 and 37 were decreased by a low-dose EB treatment, while decreases of Cxs31, 31.1, 32, 40, and 45 transcript levels were observed with a low-dose EB treatment. The treatment of a high-dose EB resulted in expressional reduction of Cxs30.3, 31, 31.1, 37, 40, 43, and 45. The Flu treatment at a low dose caused increases of Cxs26, 37, and 40 transcript levels but decreases of Cxs31.1, 43, and 45 transcript levels. Increases of Cxs30.3, 31, 37, and 40 mRNA amounts were induced by a high-dose Flu treatment. However, exposure to a high-dose Flu produced expressional decreases of Cxs31.1, 32, and 43 in the adult caput epididymis. These observations suggest that exposure to EB or Flu at the neonatal period could lead to aberrant expression of Cx isoforms in the adult caput epididymis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.7
• /
• pp.721-726
• /
• 2003

This paper present a waveguide slot 16${\times}$16 assay antenna with diaphragms for 38 GHz frequency band. Diaphragms are used to control the impedance and to minimize the return loss of the structure. A 20 dB Chebyshev array of 16 waveguide slots has been designed by optimizing the positions and sizes of the diaphragms. A serial feeding system with $\pi$- and T-junction power dividers has also designed to get a 20 dB Chebyshev power distribution. A 16${\times}$16 slot array was designed for a Fixed Wireless Access System at 38 GHz frequency band, manufactured using a computer controlled milling technique, and measured for the return -19 dB and the frequency band of 740 MHz.

• Progress in Superconductivity
• /
• v.8 no.2
• /
• pp.181-185
• /
• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• Korean Journal of Materials Research
• /
• v.27 no.12
• /
• pp.658-663
• /
• 2017

Urchin-structured zinc oxide(ZnO) nanorod(NR) gas sensors were successfully demonstrated on a polyimide(PI) substrate, using single wall carbon nanotubes(SWCNTs) as the electrode. The ZnO NRs were grown with ZnO shells arranged at regular intervals to form a network structure with maximized surface area. The high surface area and numerous junctions of the NR network structure was the key to excellent gas sensing performance. Moreover, the SWCNTs formed a junction barrier with the ZnO which further improved sensor characteristics. The fabricated urchin-structured ZnO NR gas sensors exhibited superior performance upon $NO_2$ exposure with a stable response of 110, fast rise and decay times of 38 and 24 sec, respectively. Comparative analyses revealed that the high performance of the sensors was due to a combination of high surface area, numerous active junction points, and the use of the SWCNTs electrode. Furthermore, the urchin-structured ZnO NR gas sensors showed sustainable mechanical stability. Although degradation of the devices progressed during repeated flexibility tests, the sensors were still operational even after 10000 cycles of a bending test with a radius of curvature of 5 mm.

• Electronics and Telecommunications Trends
• /
• v.38 no.6
• /
• pp.41-51
• /
• 2023

Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

• Korean Journal of Materials Research
• /
• v.9 no.1
• /
• pp.86-91
• /
• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.586-591
• /
• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Journal of the Korean Society of Hazard Mitigation
• /
• v.10 no.5
• /
• pp.117-124
• /
• 2010

Most of the rivers which exist in nature are not a single river but the network that is composed of several branches and mainstreams. The river network are more complicated than other sigle rivers and streams. Therefore the hydraulic characteristics are sensitively changed by reduction and expansion of the width in the confluence or the variation of the flux. In this paper, the hydraulic characteristics were calculated by the change of the width and length in the confluence and the hydraulic model test. The deposit of confluence emerged at the left bank, right bank and the stagnation sector. As the total flow in the branch have increased, stagnation of the left bank and right bank have decreased. When the width of the downstream have been get smaller from 3 m to 2 m, the deposit of the left bank and right bank and stagnation sector have decreased. But as the eddy flow in the center of the confluence is occurred, the erosion has been increased. The result of this paper can be used as a basic data of water management around the junction and for maintenance on the ground of development of the river.