• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.82-87
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• 2007

The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be effectively suppressed. Particularly, the effects of trap states at the metal-silicide/silicon interface of S/D junction were simulated by taking into account the tail distributions and the Gaussian distributions at the silicon band edge and at the silicon midgap, respectively. As a result of device simulation, the reduction of interfacial trap states with Gaussian distribution is more important than that of interfacial trap states with tail distribution for improving the metallic junction diodes and SB-MOSFET. It is that a forming gas annealing after silicide formation significantly improved the electrical properties of metallic junction devices.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.513-516
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• 2002

In electrical impedance tomography(EIT), various image reconstruction algorithms have been used in order to compute the internal resistivity distribution of the unknown object with its electric potential data at the boundary. Mathematically the EIT image reconstruction algorithm is a nonlinear ill-posed inverse problem. This paper presents two intelligent optimization algorithm techniques such as genetic algorithm and simulated annealing for the solution of the static EIT inverse problem. We summarize the simulation results for the three algorithm forms: modified Newton-Raphson, genetic algorithm, and simulated annealing.

• Journal of Information Display
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• v.5 no.1
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• pp.1-6
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• 2004

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

• Journal of Integrative Natural Science
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• v.6 no.1
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• pp.8-11
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• 2013

In this manuscript, we report a protocol to determine most of the lowest energy conformations from the ensemble of conformations. 12-crown-4 was taken as study compound to get the most of energy minima conformations. Molecular dynamic (MD) simulation for 1 nanosecond (ns) was performed at 300, 500, 700, 900 and 1100 K temperature. At particular interval conformations were sampled. Then Gaussian program was used to minimize compounds using PM6 energy levels. Duplicates were removed by checking energy as well as mirror image conformations, and only unique conformations were retained for the next $6-31+G^*$ level minimization. It was observed that upto certain increment in temperature the number of unique conformations were increased, but afterword it decreased.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.968-970
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• 1993

In this paper, the loss components of IPMSM(Inteiror Permanent Magnet Synchronous Motor) is derived. To maximize the efficiency of the motor, a design method that optimizes the design variables is proposed Objective function consists of stator winding loss, core loss, and mechanical loss. Simulated annealing is used as the optimization method which is appropriate for finding the global minimum of nonlinear function with many local minima. Through the simulation of the motor characteristics, the prominence of the proposed design method is verified.

• Journal of Mechanical Science and Technology
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• v.19 no.4
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• pp.958-967
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• 2005

The mathematical model for tension behaviors of a moving web by Shin (2000) is extended to the tension model considering the thermal strain due to temperature variation in furnace. The extended model includes the terms that take into account the effect of the change of the Young's Modulus, the thermal coefficient, and the thermal strain on the variation of strip tension. Computer simulation study proved that the extended tension model could be used to analyze tension behaviors even when the strip goes through temperature variation. By using the extended tension model, a new tension control method is suggested in this paper. The key factors of suggested tension control method include that the thermal strain of strip could be compensated by using the velocity adjustment of the helper-rollers. The computer simulation was carried out to confirm the performance of the suggested tension control method. Simulation results show that the suggested tension control logic not only overcomes the problem of the traditional tension control logic, but also improves the performance of tension control in a furnace of the CAL (Continuous Annealing Line).

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Communications for Statistical Applications and Methods
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• v.14 no.1
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• pp.215-227
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• 2007

Variable selection algorithm for Sliced Inverse Regression using penalty function is proposed. We noted SIR models can be expressed as generalized eigenvalue decompositions and incorporated penalty functions on them. We found from small simulation that the HARD penalty function seems to be the best in preserving original directions compared with other well-known penalty functions. Also it turned out to be effective in forcing coefficient estimates zero for irrelevant predictors in regression analysis. Results from illustrative examples of simulated and real data sets will be provided.

• Journal of the Korean Operations Research and Management Science Society
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• v.22 no.4
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• pp.37-50
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• 1997

We consider the channel allocation problem for the earth orbit (LEO) satellite systems. This problm is known to be NP-complete and a couple of heuristic algorithms have been developed. In this paper, we convert the problem into a simpler form through the concept of pattern. And we suggest another algorithm based on Simulated Annealing for this simplified problem. The results of performance comparison show that our method works very well. Simulation results are reported.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.55-58
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• 2003

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.