• Current Optics and Photonics
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• v.3 no.6
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• pp.522-530
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• 2019

We present simulation methods to accurately determine the transmission efficiency and far-field patterns (FFPs) of a shallow-etched waveguide grating antenna (WGA) formed on a silicon-on-insulator wafer based on the finite-difference time-domain (FDTD) approach. The directionality and the FFP of a WGA with >1-mm in length can be obtained reliably by simulating a truncated WGA structure using a three-dimensional FDTD method and a full-scale WGA using a two-dimensional FDTD with the effective index method. The developed FDTD methods are applied to the simulation of an optical phased array (OPA) composed of a uniformly spaced WGA array, and the steering-angle dependent transmission efficiency and FFPs are obtained in OPA structures having up to 128-channel WGAs.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.116-126
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• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.569-573
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• 2014

We demonstrate a low-cost, superbly efficient way of etching for the nano-, and micro-sized pyramid patterns on (100)-oriented Si wafer surfaces for use as a patterned master. We show a way of producing functional optical films for the viewing angle direction brightness-enhancement of Lambertian LED (light emitting diode)/OLED (organic light emitting diode) planar lighting applications. An optimally formulated KOH (Potassium hydroxide) wet etching process enabled random-positioned, and random size-distributed (within a certain size range) pyramid patterns to be developed over the entire (100) silicon wafer substrates up to 8" and a simple replication process of master patterns onto the PC (poly-carbonate) and PMMA (poly-methyl methacrylate) films were performed. Haze ratio values were measured for several film samples exhibiting excellent values over 90% suitable for LED/OLED lighting purposes. Brightness was also improved by 13~14% toward the viewing angle direction. Computational simulations using LightTools$^{TM}$ were also carried out and turned out to be in strong agreement with experimental data. Finally, we could check the feasibility of fabricating low-cost, large area, high performance optical films for commercialization.

• IT SoC Magazine
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• s.23
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• pp.10-22
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1455-1458
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• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

• Laser Solutions
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• v.9 no.2
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• pp.11-15
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• 2006

We report experimental results on the high-speed micromachining using a femtosecond laser (800 nm, 130 fs, 1kHz) and galvanometer scanner system (Raylase, Germany). Periodic hole drilling of silicon and glass with the scan speed of 1-20 mm/s is demonstrated. Finally, we demonstrate the utility of the femtosecond laser application to ITO patterning by using a high-speed femtosecond laser scanner system.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.904-907
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• 2007

We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.373-374
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• 2007

The amorphous silicon microbolometer array has been developed by the MEMS design and fabrication technology. Before the bolometer array for the image sensor being designed, the structure of unit cel I and 16x16 array of it was simulated, designed and fabricated. The properties of bolometer have been measured as such that the TCR and thermal time constant can be achieved -2 %/K and 1.4 msec respectively.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Current Optics and Photonics
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• v.4 no.1
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• pp.81-81
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• 2020