• Electronics and Telecommunications Trends
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• v.37 no.3
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• pp.11-22
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• 2022

The development and application of silicon photonics technology to terabit optical transmission are expected in the future. Silicon photonics technology is recognized as the only technology focusing on increasing the bandwidth of data center switches. High-density integration-based small optical subassemblies, optical engines, and optical transceivers are converged with the silicon photonics technology to accelerate a revolution in optical interfaces.

• Journal of the Optical Society of Korea
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• v.5 no.1
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• pp.1-4
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• 2001

The results of investigating $SiL_{2,3}$/ X-ray emission valence spectra of amorphous silicon films irradiated by excimer laser are presented. It is found that laser annealing leads to crystallization of amorphous silicon films and the crystallinity increases with the laser energy density from 250 to 400 mJ/$\textrm{cm}^2$. The vertical structure of the film is investigated by changing the accelerating voltage on the X-ray tube, and the chemical and structural state of Si$_3$N$_4$ buffer layer is found not to be changed by the excimer laser treatment.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.290-297
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• 2010

The paper reviews progress and future prospects of two kinds of planar waveguide devices; they are (a) silica and silicon photonics multi/demultiplexers for communications and signal processing applications, and (b) a novel waveguide spectrometer based on Fourier transform spectroscopy for sensing applications.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.288-297
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• 2008

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.428-428
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• 2007

최근 고화질 카메라폰이 경박단소화 되는 경향에 따라 Plastic렌즈 또는 구면 Glass렌즈만으로는 요구되는 광학적 성능 구현이 힘들기 때문에 비구면 Glass렌즈에 대한 요구가 증가하고 있다. 이러한 비구면 Glass렌즈는 일반적으로 초경합금 성형용 코어를 이용한 고온압축 성형방식으로 제작되어지기 때문에 코어면의 초정밀 연삭가공 및 코어면 코팅기술 개발이 시급한 상황이다. 한편, 대표적인 난삭재 Silicon Carbide(SiC)는 광학적 특성 및 기계적 특성, 전기적 특성 등 우수한 특성을 가진 재료로서 우주망원경, 레이저 광 및 X선 반사용 미러 등 다종, 다양한 용도로 이용되고 있으며 전기, 전자, 정보, 정밀기기의 급격한 발전으로 SiC의 수요가 급격히 증가하고 있다. 비구면 Glass렌즈 성형용 코어를 SiC소재로 제작할 경우 성형용 코어의 수명향상, 렌즈 생산원가의 절감 및 코팅 과정의 간소화 등의 다양한 장점을 가지므로 SiC를 이용한 성형용 코어의 나노 정밀도급 초정밀 연삭가공기술의 개발이 필요하다. 본 논문에서는 3 메가픽셀, 2.5배 광학 줌 카메라폰 모듈용 비구면 Glass렌즈 개발을 목적으로 실험계획법을 적용하여 초경합금 성형용 코어의 연삭조건을 규명하였다. 초경합금 비구면 성형용 코어의 초정밀 연삭가공조건 및 결과를 바탕으로 난삭재인 Silicon Cabide(SiC)의 연삭가공조건을 구하고 이를 이용하여 비구면 Glass렌즈 성형용 코어를 초정밀 연삭가공하였다.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.209-210
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.149-150
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.391-392
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• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed and fabricated. We designed the microbolometer with a pixel size of $35\times35$, $44\times44{\mu}m^2$ and a fill factor of about 70 % by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Finally, we successfully fabricated the microbolometer by using surface MEMS technology, and the properties of bolometer have been measured as such that TCR and absorptance can be achieved above -2.5%/K and about 90% with titanium layer, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.207-208
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• 2007

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.187-192
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• 2008

The design and analysis of a novel photonic crystal electro-optic modulator are presented in this paper. The device incorporates an electro-optic (EO) polymer slot waveguide into the center of a silicon photonic crystal waveguide. In this device, strong optical confinement in the EO polymer core and small group velocity from the photonic crystal structure provide a surprise enhancement of the EO effect.