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http://dx.doi.org/10.3807/JOSK.2008.12.4.288

Analysis of Temperature Effects on Raman Silicon Photonic Devices  

Kim, Won-Chul (School of Electronic and Electrical Engineering, Hongik University)
Park, Dong-Wook (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of the Optical Society of Korea / v.12, no.4, 2008 , pp. 288-297 More about this Journal
Abstract
Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.
Keywords
Temperature dependence; Stimulated raman scattering; Silicon photonics; Raman susceptibility; Raman gain coefficient; Parametric wavelength conversion; Coupled-mode equations; Coupling coefficients;
Citations & Related Records

Times Cited By Web Of Science : 3  (Related Records In Web of Science)
Times Cited By SCOPUS : 2
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