• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.296-298
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• 1997

The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.257-260
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• 2010

Zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were prepared by the use of injector type atomic layer deposition. Two hybrid gate oxide systems of different polarity polymers with silicon oxide were examined with the aim of improving the properties of the transistors. The mobility and threshold voltage of a ZnO TFT with a poly(4-dimethylsilyl styrene) (Si-PS)/silicon oxide hybrid gate dielectric had values of 0.41 $cm^2/Vs$ and 24.4 V, and for polyimide/silicon oxide these values were 0.41 $cm^2/Vs$ and 24.4 V, respectively. The good hysteresis property was obtained with the dielectric of hydrophobicity. The solid output saturation behavior of ZnO TFTs was demonstrated with a $10^6$ on-off ratio.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.820-824
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• 1992

An accurate method for extracting both Si film doping concentration and front or back silicon-to-oxide fixed charge density of fully depleted SOI devices is proposed. The method utilizes the current-to-voltage and capacitance-to-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The Si film doping concentration and the front or back silicon-to-oxide fixed charge density are extracted by mainpulating the respective threshold voltages of the SOI NMOSFET and PMOSFET according to the back surface condition (accumulation or inversion) and the capacitance-to-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% errors for wide variations of the film doping concentration and the front or the back silicon-to-oxide fixed charge density.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.414-418
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• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.