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http://dx.doi.org/10.4313/TEEM.2015.16.2.103

The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor  

Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Choi, Jun Young (Department of Electrical Engineering and Institute for Nano Science, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.2, 2015 , pp. 103-105 More about this Journal
Abstract
Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.
Keywords
Oxide; Thin film transistor (TFT); Solution process;
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