• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.368-369
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin film with various doping concentration, in which poly 3C-SiC thin film's mechanical properties according to the n-doping concentration 1%$(9.2\times10^{15}cm^{-3})$, 3%$(5.2\times10^{17}cm^{-3})$, and 5%$(6.8\times10^{17}cm^{-3})$ respectively was measured by nano indentation. In the case of $9.2\times10^{15}^{-3}$ n-doping concentration, Young's Modulus and hardness were obtained as 270 GPa and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin film doped by 5% concentration was 15 nm, which is also the best of them.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.437-440
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• 2010

This paper represents a simple and effective calculation method to predict the orthotropic engineering constants for C/SiC woven fabric composite. The method, a quasi-analytical method using the modified equivalent laminated model, idealizes the woven fabric structure as a symmetric three-ply laminate to utilize a classical laminated plate theory. The required initial parameters are in-plane modulus from experiments and crimp ratio of the woven fabric. This study shows its feasibility by demonstrating example to calculate the engineering constants to thickness direction needed for three dimensional thermo-mechanical stress calculations.

• Nuclear Engineering and Technology
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• v.45 no.6
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• pp.811-820
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• 2013

SiC has been under investigation as a potential cladding for LWR fuel, due to its high melting point and drastically reduced chemical reactivity with liquid water, and steam at high temperatures. As SiC is a brittle material its behavior during the reflood phase of a Loss of Coolant Accident (LOCA) is another important aspect of SiC that must be examined as part of the feasibility assessment for its application to LWR fuel rods. In this study, an experimental assessment of thermal shock performance of a monolithic alpha phase SiC tube was conducted by quenching the material from high temperature (up to $1200^{\circ}C$) into room temperature water. Post-quenching assessment was carried out by a Scanning Electron Microscopy (SEM) image analysis to characterize fractures in the material. This paper assesses the effects of pre-existing pores on SiC cladding brittle fracture and crack development/propagation during the reflood phase. Proper extension of these guidelines to an SiC/SiC ceramic matrix composite (CMC) cladding design is discussed.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.1-6
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• 2003

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/$\textrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.16 no.2
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• pp.233-242
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• 2018

To overcome the low mechanical strength and corrosion behavior of a carbon steel canister at high temperature condition of a deep borehole, SiC ceramics were studied as an alternative material for the disposal canister. In this paper, a design concept for a SiC canister, along with an outer stainless steel container, was proposed, and its manufacturing feasibility was tested by fabricating several 1/3 scale canisters. The proposed canister can contain one PWR assembly. The outer container was also prepared for the string formation of SiC canisters. Thermal conductivity was measured for the SiC canister. The canister had a good thermal conductivity of above $70W{\cdot}m^{-1}{\cdot}K^{-1}$ at $100^{\circ}C$. The structural stability was checked under KURT environment, and it was found that the SiC ceramics did not exhibit any change for the 3 year corrosion test at $70^{\circ}C$. Therefore, it was concluded that SiC ceramics could be a good alternative to carbon steel in application to deep borehole disposal canisters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.317-322
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• 2010

This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1763-1765
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• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.286-289
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• 2003

In the case of high voltage devices, junction termination plays an important role in determining the breakdown voltage of the device. The mesa junction termination has been demonstrated to yield nearly ideal breakdown voltage for 6H-SiC p-n junctions. However, such an approach may not be attractive because of the nonplanar surface, which is difficult to passivate. Moreover, In case of 4H-SiC, ideal breakdown voltage could not be achieved using mesa junction termination. For 4H-SiC planar junction termination technique is more useful one rather than mesa junction termination. In this paper, breakdown characteristics of the 4H-SiC device with planar junction termination, such as FLR(Field Limiting Ring), FP(Field Plate) and JTE(Junction Termination Extension), is presented. In the case of the FLR, breakdown voltage of 1800V is obtained. And breakdown voltage of 1000V and 1150V is also obtained for the case of FP and JTE case, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.