Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Hydrogen Behaviors with different introduction methods in SiC-C Films

  • Huang, N.K. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University) ;
  • Zou, P. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University) ;
  • Liu, J.R. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University) ;
  • Zhang, L. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University)
  • Published : 2003.10.01
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Abstract

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/$\textrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

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References

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