Hot-Wire CVD법에 의한 미세결정 실리콘 박막 증착 및 태양전지 응용

Microcrystalline Silicon Thin Films and Solar Cells by Hot-Wire CVD

  • 이정철 (한국에너지기술연구원 태양광발전연구팀) ;
  • 유진수 (한국에너지기술연구원 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구원 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구원 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구원 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구원 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구원 태양광발전연구팀)
  • 발행 : 2002.05.17

초록

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

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