Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Low Temperature Deposition of $\mu$ c-Si:H Films by Hot Wire CVD

Hot Wire CVD법에 의한 미세결정 실리콘 박막의 저온 증착

  • Lee, Jeong-Chul (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kan, Ki-Whan (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kim, Seok-Ki (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Song, Jin-Soo (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Park, I-Jun (Photovoltaic Research Team, Korea Institute of Energy Research)
  • 이정철 (한국에너지기술연구소 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구소 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구소 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구소 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구소 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구소 태양광발전연구팀)
  • Published : 2000.07.17
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Abstract

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

Keywords