[KSCI] Korea Science Citation Index Service

Hydrogen Behaviors with different introduction methods in SiC-C Films

Huang, N.K. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University)
Zou, P. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University)
Liu, J.R. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University)
Zhang, L. (Key Lab. For Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University)

Publication Information

Journal of the Korean Vacuum Society / v.12, no.S1, 2003 , pp. 1-6 More about this Journal

Abstract

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/ $\textrm{cm}^2$ . SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

Keywords

SiC-C films; hydrogen behaviors; magnetron sputtering;

Citations & Related Records

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