• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.353-360
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• 2017

Recently, due to physical limitation of Si based power semiconductor, development speed of switching power semiconductors is falling and it is difficult to expect any further performance improvements. SiC based power semiconductor with superior characteristic than Si-based power semiconductor have been developed to overcome these limitations. however, there is not method to apply for real system. Therefore, suggested the feasibility and solution for SiC-based power semiconductor system. design to 1kW class DC-DC boost converter and demonstrated the superiority of SiC MOSFET under the same operating conditions by analyzing switching frequency, duty ratio, voltage and current, and comparing with Si based power semiconductor through experimental efficiency according to each system load. The SiC MOSFET has high efficiency and fast switching speed, and can be designed with small inductors and capacitors which has the advantage of volume reduction of the entire system.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.226-227
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• 2016

본 논문은 SiC Mosfet Gate Driver에서 Overcurrent상황 발생시 Mosfet 양단의 전압을 검출함으로써 스위칭 소자를 보호하는 Desaturation detction circuit에 대해 다룬다. IGBT와 다르게 SiC Mosfet의 경우 ohmic 영역과 saturation영역의 구분이 명확하지 않기 때문에 과전류 발생시 Mosfet 양단 전압을 검출하는데 어려움이 있다. 따라서 이를 보완하기 위하여 Mosfet drain측에 새로운 회로를 추가로 설계함으로써 이를 보완하여 효과적으로 양단전압을 검출한다.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.92-94
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• 2018

본 논문은 SiC MOSFET 디바이스를 사용하는 전력변환장치에서 Rogowski 코일을 이용하여 SiC MOSFET 디바이스에 흐르는 전류를 측정하여, 과전류를 검출하고 게이팅 신호를 차단하는 기법에 관하여 연구한다. SiC MOSFET는 소자의 특성으로 보편적으로 사용되는 과전류 검출 방법인 DeSAT 적용이 어렵기 때문에 Rogowski 코일을 사용하여 스위치 전류를 측정, 과전류를 검출한다. 본 논문에서는 PCB패턴 Rogowski 코일의 설계 방법뿐만 아니라 Rogowski 코일과 적분기의 대역폭에 대해서도 논의한다. 실험은 직류링크 커패시터에 SiC MOSFET 스위치 레그를 병렬로 연결하고, 직류링크 커패시터에 직류전압을 충전 후 스위치 레그를 약 6us정도 단락시켜 SiC MOSFET에 과전류를 발생시킨다. 이 때, 제안한 Rogowski 코일을 이용한 과전류 검출 및 차단 기법의 적용 전후를 비교하여 동작 및 성능(검출 및 차단 소요시간)을 확인한다. 마지막으로 실험 결과를 통해 본 논문에서 제안한 PCB패턴 Rogowski 코일을 이용하여 과전류 검출 및 차단 기법이 검증되었다.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Journal of IKEEE
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• v.27 no.1
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• pp.103-108
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• 2023

This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1,840mΩ, for planner gate power MOSFET and to 40mΩ for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.155-160
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• 2023

The potential performance benefits of Silicon Carbide(SiC) MOSFETs in high power, high frequency power switching applications have been well established over the past 20 years. In the past few years, SiC MOSFET offerings have been announced by suppliers as die, discrete, module and system level products. In high-voltage SiC vertical devices, major design concerns is the edge termination and cell pitch design Field Limiting Rings(FLR) based structures are commonly used in the edge termination approaches. This study presents a comprehensive analysis of the impact of variation of FLR and JFET region on the performance of a 3.3 kV SiC MOSFET during. The improvement in MOSFET reverse bias by optimizing the field ring design and its influence on the nominal operating performance is evaluated. And, manufacturability of the optimization of the JFET region of the SiC MOSFET was also examined by investigating full-map electrical characteristics.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.6
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.