• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.362-366
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• 2018

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• Journal of the Korea Institute of Building Construction
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• v.21 no.5
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• pp.459-468
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• 2021

Blocking electromagnetic waves on the exterior walls of buildings effectively reduces the intensity of electromagnetic fields in buildings, which leads to attenuation of electromagnetic disturbances, so there is a great interest in developing technologies. In this study, SiC by-products and graphite generated in the semiconductor field were selected and mixed into mortar after pretreatment such as pulverization to evaluate their physical properties and electromagnetic wave shielding performance. Considering the economic efficiency of each shielding material, only 10% volume of the outermost side of the experiment was mixed with each shielding material to evaluate the shielding performance. The shielding performance was predicted when the experiment was manufactured by mixing the shielding material with the entire volume of the experiment using the shielding effect evaluation formula. The results of the experiment showed that the shielding performance was up to 20 dB when SiC grains were mixed with shielding materials, the shielding performance was up to 18 dB when graphite powder was mixed with shielding materials, and the shielding performance was up to 28 dB when SiC powder was mixed with shielding materials, and the shielding performance was close to 30 dB, which is known to have a shielding rate of 99.9%.

• Journal of Technologic Dentistry
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• v.28 no.2
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• pp.355-366
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• 2006

The purpose of this study was to determine if repeated casting has a detrimental effect on the corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis, vickers hardness test, SEM, EDX and corrosion test were performed to determine the effects of recasting on chemical composition, microstructure, physical property, castability and corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed that major crystal phase contained nickel-chrome compounds, Nickel carbide and Chrome carbide. Microstructure analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed recasting has no effect on microstructure. EDX analysis results indicated the percentage of the main component nickel(Ni) in the specimens of the VeraBond showed a tendency to increase with recasting, but those of other components Carbon(C) showed a tendency to decrease with recasting, Chrome(Cr), Silicon(Si), Aluminium(Al) and molybdenum(Mo) showed no changes in the percentage. The percentage of the main component nickel(Ni) in the specimens of the Rexillium V showed a tendency to increase with recasting, but those of other components silicon(Si), carbon(C) and molybdenum(Mo) showed a tendency to decrease with recasting, chrome(Cr) and aluminium(Al) showed no changes in the percentage. The vickers hardness results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The castability results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The cast and recast specimens of the VeraBond and the Rexillium V showed no differences in the corrosion resistance. The results indicate that the VeraBond and the Rexillium V can be safely recast.

• Electronics and Telecommunications Trends
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• v.29 no.6
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• pp.53-62
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• 2014

본고는 최근 화두가 되고 있는 에너지 절감을 위해 고효율, 친환경의 WBG(Wide Band-Gap) 화합물반도체인 SiC(Silicon Carbide), GaN(Gallium Nitride) 전력반도체 소자 및 전력변환 모듈의 기술동향과 ETRI에서 연구개발 진행 중인 GaN 전력반도체 관련 기술에 대해 기술한다. WBG 전력반도체는 기존의 실리콘 전력반도체와 비교하여 열 특성 향상, 고속 스위칭, 고전압/고전류 특성 및 스위칭 손실 최소화 등이 가능하고 이에 따른 시스템의 소형화 및 전력효율 향상 효과를 얻을 수 있다. 특히, GaN 전력반도체 소자는 시장이 가장 넓게 형성되어 있는 900V 이하에 적용이 가능하며, 앞으로 시장이 커질 것으로 예상되는 HEV(Hybrid Electric Vehicle)/EV(Electric Vehicle)의 친환경 자동차에도 활용될 것으로 기대되고 있다. 본고는 최근의 일본과 미국에서의 WBG 전력반도체에 대한 관심 및 투자 방향과 GaN 전력반도체 소자에 대한 해외 기업의 업계동향에 대해서도 함께 살펴본다. 이러한 WBG 전력반도체에 대한 해외 선진업체의 산업동향과 더불어 ETRI에서 연구개발 중인 GaN 전력반도체 기술현황에 대해 전력소자 설계 및 제조공정, 패키징, 전력모듈 설계 제작 기술을 포함하여 기술한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.367-371
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• 2018

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• Resources Recycling
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• v.19 no.5
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• pp.31-43
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• 2010

To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.