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http://dx.doi.org/10.4313/JKEM.2022.35.3.5

Electrical Characteristics Analysis Depending on the Portion of MPS Diode Fabricated Based on 4H-SiC in Schottky Region  

Lee, Hyung-Jin (Department of Electronic Materials Engineering, Kwangwoon University)
Kang, Ye-Hwan (Yes Power Technix)
Jung, Seung-Woo (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Geon-Hee (Department of Electronic Materials Engineering, Kwangwoon University)
Byun, Dong-Wook (Department of Electronic Materials Engineering, Kwangwoon University)
Shin, Myeong-Choel (Department of Electronic Materials Engineering, Kwangwoon University)
Yang, Chang-Heon (Yes Power Technix)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.35, no.3, 2022 , pp. 241-245 More about this Journal
Abstract
In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.
Keywords
Silicon carbide; MPS diode; Temperature; Threshold voltage; Barrier height; Ideality factor;
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Times Cited By KSCI : 1  (Citation Analysis)
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