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http://dx.doi.org/10.4313/JKEM.2018.31.6.367

Electrical Characteristics of 4H-SiC Junction Barrier Schottky Diode  

Lee, Young-Jae (Department of Electronic Materials Engineering, Kwang-woon University)
Cho, Seulki (Department of Electronic Materials Engineering, Kwang-woon University)
Seo, Ji-Ho (Department of Electronic Materials Engineering, Kwang-woon University)
Min, Seong-Ji (Department of Electronic Materials Engineering, Kwang-woon University)
An, Jae-In (Department of Electronic Materials Engineering, Kwang-woon University)
Oh, Jong-Min (Department of Electronic Materials Engineering, Kwang-woon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwang-woon University)
Lee, Deaseok (Department of Electronic Materials Engineering, Kwang-woon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.6, 2018 , pp. 367-371 More about this Journal
Abstract
1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.
Keywords
Silicon carbide; JBS diode; SBD; Temperature; Threshold voltage; Barrier height;
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