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http://dx.doi.org/10.4313/JKEM.2018.31.6.362

Temperature-Dependent Characteristics of SBD and PiN Diodes in 4H-SiC  

Seo, Ji-Ho (Department of Electric Materials Engineering, Kwang-woon University)
Cho, Seulki (Department of Electric Materials Engineering, Kwang-woon University)
Lee, Young-Jae (Department of Electric Materials Engineering, Kwang-woon University)
An, Jae-In (Department of Electric Materials Engineering, Kwang-woon University)
Min, Seong-Ji (Department of Electric Materials Engineering, Kwang-woon University)
Lee, Daeseok (Department of Electric Materials Engineering, Kwang-woon University)
Koo, Sang-Mo (Department of Electric Materials Engineering, Kwang-woon University)
Oh, Jong-Min (Department of Electric Materials Engineering, Kwang-woon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.6, 2018 , pp. 362-366 More about this Journal
Abstract
Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.
Keywords
Sillicon caribide; Power devices; PiN; SBD; Barrier height; Ideality factor;
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