• 한국분말재료학회지
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• 제24권6호
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• pp.450-456
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• 2017

Reaction-bonded silicon carbide (RBSC) is a SiC-based composite ceramic fabricated by the infiltration of molten silicon into a skeleton of SiC particles and carbon, in order to manufacture a ceramic body with full density. RBSC has been widely used and studied for many years in the SiC field, because of its relatively low processing temperature for fabrication, easy use in forming components with a near-net shape, and high density, compared with other sintering methods for SiC. A radiant tube is one of the most commonly employed ceramics components when using RBSC materials in industrial fields. In this study, the mechanical strengths of commercial RBSC tubes with different sizes are evaluated using 3-point flexural and C-ring tests. The size scaling law is applied to the obtained mechanical strength values for specimens with different sizes. The discrepancy between the flexural and C-ring strengths is also discussed.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• 한국세라믹학회지
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• 제43권8호
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• pp.492-497
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• 2006

SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.489-490
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.155-160
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• 2023

The potential performance benefits of Silicon Carbide(SiC) MOSFETs in high power, high frequency power switching applications have been well established over the past 20 years. In the past few years, SiC MOSFET offerings have been announced by suppliers as die, discrete, module and system level products. In high-voltage SiC vertical devices, major design concerns is the edge termination and cell pitch design Field Limiting Rings(FLR) based structures are commonly used in the edge termination approaches. This study presents a comprehensive analysis of the impact of variation of FLR and JFET region on the performance of a 3.3 kV SiC MOSFET during. The improvement in MOSFET reverse bias by optimizing the field ring design and its influence on the nominal operating performance is evaluated. And, manufacturability of the optimization of the JFET region of the SiC MOSFET was also examined by investigating full-map electrical characteristics.

• 한국세라믹학회지
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• 제38권12호
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• pp.1075-1079
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• 2001

The R-curve for in situ-toughened SiC-30 wt% TiC composites was estimated by the indentation-strength method and compared to that of monolithic SiC with toughened microstructure. Both materials exhibited rising R-curve behavior. The SiC-TiC composites, however, displayed better damage tolerance and higher resistance to crack growth. Total volume fractions of SiC key grains, which take part in toughening mechanisms such as crack bridging and crack deflection, were 0.607 for monolithic SiC ceramics and 0.614 for SiC-TiC composites. From the microstructural characterization and the residual stress calculation, it was inferred that this superior performance of SiC-TiC composites can be attributed to stress-induced microcracking at heterophase (SiC/TiC) boundaries and some contribution from carck deflection by TiC grains.

• 한국세라믹학회지
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• 제48권6호
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• 한국세라믹학회지
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• 제53권6호
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• pp.707-711
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• 2016

A small diameter of SiC fiber mat can produce much higher heat under microwave irradiation than the other types of SiC materials. Fabrication of high strength SiC fiber consists of iodine vapor curing on polycarbosilane precursor and heat treatment process. The curing stage of polycarbosilane fiber was maintained at $150-200^{\circ}C$ in a vacuum condition under the iodine vapor to fabricate a high thermal radiation SiC fiber. The structure and morphology of the fibers were characterized by Fourier transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TG) and scanning electron microscopy (SEM). In this study, the thermal properties of SiC fiber mats under microwave have been analyzed with an IR thermal camera and its image analyzer. The prepared SiC fiber mats radiated high temperature with extremely high heating rate up to $1100^{\circ}C$ in 30 seconds. The fabricated SiC fiber mats were not oxidized after the heat radiation process under the microwave irradiation.

• Composites Research
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• 제33권3호
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• pp.101-107
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• 2020

본 논문에서는 탄화규소로 코팅된 탄소-탄소복합재료의 단열 특성을 고찰하였다. 탄소-탄소 복합재료 상에 탄화규소를 화학증착법(CVD)법으로 코팅하였다. 먼저 탄화규소로 코팅한 복합재와 코팅되지 않은 복합재에 대해, 공기 중에서 1350℃의 온도를 급작스럽게 부가하였을 때의 단열특성을 서로 비교하는 연구를 수행하였다. 또한 본 연구에서는 최대 1700℃ 및 2000℃의 온도에 복합재의 표면을 노출시키는 고온 버너실험을 수행하였다. 버너실험 전, 후의 무게를 측정하여 무게변화를 고찰하였다. 고온 버너실험 후 탄소-탄소 복합재 및 탄화규소로 코팅된 복합재의 손상여부를 비교, 고찰하였다. 그 결과 2000℃의 온도에 노출 시 탄화규소 코팅재에서 박리, 균열, 공동 등의 결함손상들이 발견되었으나, 고온으로부터 탄소-탄소 복합재를 보호하는데 효과적이었다.

• 한국재료학회지
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• 제31권5호
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• pp.301-311
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• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.