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http://dx.doi.org/10.4191/kcers.2011.48.6.621

Application of 3-dimensional phase-diagram using FactSage in C3H8-SiCl4-H2 System  

Kim, Jun-Woo (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Kim, Hyung-Tae (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Kim, Kyung-Ja (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Lee, Jong-Heun (Department of Material Science and Engineering, Korea University)
Choi, Kyoon (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.48, no.6, 2011 , pp. 621-624 More about this Journal
Abstract
In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.
Keywords
Silicon carbide; CVD; Thermodynamic calculation; Computer simulation;
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Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By SCOPUS : 0
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1 K.-S. Cho, S.-H. Yoon, H. Chung, S.-H. Chae, K.-Y. Lim, Y.-W. Kim, and S.-H. Park, "SiC Materials Techniques for Semiconductor Production Line (in Korean)," Ceramist, 10 [6] 33-48 (2007).
2 Y. Yan and Z. Weigang, "Kinetic and Microstructure of SiC Deposited from $SiCl_{4}-CH_{4}-H_{2}$," Chin. J. Chem. Eng., 17 [3] 419-26 (2009).   DOI
3 R. Wang and R. Ma, "Kinetics of Halide Chemical Vapor Deposition of Silicon Carbide Film," J. Crystal Growth, 308 [1] 189-97 (2007).   DOI
4 G. Chichignoud, M. Ucar-Morais, M. Pons, and E. Blanquet, "Chlorinated Silicon Carbide CVD Revisited for Polycrystalline Bulk Growth," Surf. Coat. Tech., 201 [22-23] 8888-92 (2007).   DOI
5 W.-J. Kim, J.Y. Park, J.-I. Kim, G.W. Hong, and J. Ha, "Deposition of Large Area SiC Thick Films by Low Pressure Chemical Vapor Deposition (LPCVD) Method (in Korean)," J. Kor. Ceram. Soc., 38 [5] 485-91 (2001).   과학기술학회마을
6 J.-W. Kim, S.-M. Jeong, H.-T. Kim, K.-J. Kim, J.-H. Lee, and K. Choi, "Thermodynamic Prediction of SiC Deposition in $C_{3}H_{8}-SiCl_{4}-H_{2}$ System (in Korean)," J. Kor. Ceram. Soc., 48 [3] 236-40 (2011).   과학기술학회마을   DOI
7 Y.-H. Yun and S.-C. Choi, "Fabrication of SiC Convered Graphite by Chemical Vapor Reaction Method (II) (in Korean)," J. Kor. Ceram. Soc., 36 [1] 21-29 (1999).