• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.215-221
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• 2002

Epitaxial Si layers were deposited on (100) Si substrates by hot-wall chemical vapor deposition (CVD) technique using the $SiH_2Cl_2/H_2$chemistry. Thermochemical calculations of the Si-H-Cl system were carried out to predict the window of actual Si deposition process and to investigate the effects of process variables (i.e., deposition temperature, reactor pressure, and input gas molar ratio ($H_2/SiH_2Cl_2$)) on the epitaxial growth. The calculated results were in good agreement with the experiment. Optimum process conditions were found to be the deposition temperature of 850~$950^{\circ}C$, the reactor pressure of 2~5 Torr, and the input gas molar ratio ($H_2/SiH_2Cl_2$) of 30~70, providing device-quality epitaxial layers.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1288-1290
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• 1998

Three most dominant reactions are adsorption, movement, and desorption of $SiCl_2$ on silicon surface. $SiCl_2$ plays a key role in these dominant reactions. In this paper, surface reactions of $SiH_2Cl_2-H_2-HCl$ system are investigated and few dominant reactions were identified. An equation for Si net growth rate is derived from the analysis of these reactions and it is compared with experimental results of Bolem and Classen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Journal of the Korean Chemical Society
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• v.54 no.5
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• pp.579-581
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• 2010

Solid silica supported ferric chloride ($SiO_2-FeCl_3$) catalyzed one-step synthesis of various benzimidazoles from o-phenylenediamine and aldehydes using $H_2O_2$ as the oxidant. The salient features of this method are simple and convenient procedure, easy purification and shorter reaction times.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.