Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysis
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윤덕선
(영남대학교 응용화학공학부)
고욱현 (영남대학교 응용화학공학부) 여석기 (영남대학교 응용화학공학부) 이홍희 (서울대학교 응용화학부) 박진호 (영남대학교 응용화학공학부) |
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Near Equilibrium Growth of Silicon by Silicon by CVD: I. the Si-CI-H system
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DOI ScienceOn |
2 |
Doping of Gallium Arsenide in MOCVD: Equilibrium Calculations
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DOI ScienceOn |
3 |
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4 |
Enthalpies of Formation of the Silane Chlorides
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DOI |
5 |
Epitaxial-Base Transistors with UHV/CVD Epitaxy: Enhanced Profile Control for Greater Flexibility in Device Design
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DOI ScienceOn |
6 |
Mass Spectrometric Determination of the Heats of Formation of the Silicon Subchlorides SiCl(g),<TEX>$SiCl_2(g)$</TEX>and<TEX>$SiCl_3(g)$</TEX>
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DOI |
7 |
themodynamic analysis of the deposition process of SiC/C functionally gradient materials by CVD technique
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과학기술학회마을 |
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Insititute of National Polytechnique of Grenoble
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10 |
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11 |
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DOI |
12 |
Equilibrium Calculations for the Si-H-Cl system from 300 to 3000 K
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DOI |
13 |
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14 |
Low Temperature silicon epitaxy by Hot wall Ultrahigh Vacuum/Low Pressure CVD Techniques: Surface Optimization
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DOI ScienceOn |
15 |
Characterization of IC devices Fabricated in Low Temperature (550C) Epitaxy by UHV/CVD Technique
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