• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.144-149
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• 2006

In this research we tried to make nano-sized TiNx by using planetary milling, and we made the composites double layered of titanium and nano-sized TiNx by using spark plasma sintering apparatus after mixing with the different ratio of pure titanium powder, and they were heat treated at $850^{\circ}C$ for 30 minutes. The crystal structures of nano-sized TiNx powders and the composites were analyzed by X-ray diffraction (XRD). The microstructures of the powders were analyzed by using scanning electron microscopy (FESEM) and the 40-50 nm size of nano-sized TiNx particle on the surface of agglomerated particles was investigated. With increasing the ratio of nano-sized TiNx of the composites, the microvickers hardness of the composites was increased.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1186-1191
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• 1999

By using a liquid-mix precursor, we prepared the hollow glass spheres(HGS) as an additive of polymer compound which are used in the field of modifier, promoter, filler, and reinforcement. Liquid-mix precursor is a mixture of 40% sodium silicate aqueous solution, boric acid as a insolubilizing agent, and urea as a blowing agent. To obtain the precursor particles which are fed into a gas flame furnae, the above liquid-mix precursor was dried in oven and crushed with ball mill. We assumed the size of precursor particles ($53{\sim}63{\mu}m$, $63{\sim}180{\mu}m$), temperature of furnace($800{\sim}1200^{\circ}C$), and amount of urea(0~30 g) as the parameters affecting on the properties of HGS. As a result mean particle size of HGS increases with increasing the temperature of furnace and the amount of urea and with decreasing the size of precursor particles. Also, we found that incresing the amount of urea is related to a decrease of the crush strength of HGS.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.131-136
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• 2011

A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

• Carbon letters
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• v.11 no.4
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• pp.293-297
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• 2010

To investigate new potential application of a clay material for C/C composites, illite added C/C composites were prepared with various illite contents. The improvement of filler effect by illite size reduction was also investigated using wet ballmilling by evaluating illite/phenolic resin infiltration using bulk density and porosity measurements, chemical structural changes of the composites using XRD, and thermal oxidation stability in air of the composites using TGA. The size reduction of illite resulted in narrower particle size distribution and improved illite infiltration into carbon preform. And the resultant C/C composites prepared with illite had even more improved thermal oxidation stability in air, showing more increased IDTs up to $100^{\circ}C$, compared to those of the C/C composites with pristine illite, due to the SiC formation through carbothermal reduction between illite and carbon materials. The illite induced delay in oxidation of the illite-C/C composites was also observed and the delayed oxidation behavior was attributed to the layered structure of illite, which improved illite/phenol resin infiltration. Therefore, the potential use of illite as filler to improve oxidation stability of C/C composite can be promising. And the size reduction of illite can improve its effect on the desired properties of illite-C/C composites even more.

• Polymer(Korea)
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• v.30 no.2
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• pp.152-157
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• 2006

Anionic or Zwitter-ionic waterbone polyurethanes (WPU) based on mixtures of hydroxy terminated poly-butadiene and poly(propylene glycol) were prepared and their physical properties were characterized. Particle size of WPU increased with increasing the content of HTPB. It was observed that the microphase separation of soft segments and hart segments increased with increasing the content of HTPB in the WPUs. Zwitter-ionic WPU showed stronger hydrogen bonds between molecules than anionic WPU after drying. Polyurethane films obtained after drying of WPUs exhibit besmechanical properties when the HTPB content among polyols for WPUs were 25wt%. It is postulated that such mechanical properties resulted from different microphase separation of soft segments and hard segments of polyurethane films obtainec after drying of WPUs.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.792-796
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• 2015

With high integration of electronic components, power inductors are also miniaturized. Recently, thick film processes for small size power inductors were developed and commercialized. However, the thick film process to prepare soft magnetic green sheets was not reported enough. In this study, we used Fe-Si magnetic and CIP (carbonyl iron powders) as starting materials to lead to a bimodal particle size distribution in the sheet. We proposed a newly developed 'Modified slurry preparation process' to get well dispersed condition even at high solid contents. Using the new process, it was possible to prepare a well dispersed slurry over 70 vol% of solid. BYK-103 was better than BYK-111 as dispersant in this slurry and the optimum amount was 0.6 wt%. The optimized slurry was formed into a sheet by tape casting process and then the sheet was laminated. We conformed that small size powder, large size powder, and epoxy resin were well dispersed in the green sheet.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.97-105
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• 1998

20mol% Gd-doped CeO2 ultrafine powders as a promising electrolyte for the low temperature solid ox-ide fuel cells were synthesized with particle sizes of 15-20 nm using glycine nitrate process(GNP) fol-lowed by sintering their pellets at 150$0^{\circ}C$ for various times in air and then the electrical properties of the sintered pellets were investigated. The sintering behaviors and electrical properties for the sintered 20 sintered mol% Gd-doped CeO2 pellets were analyzed using dilatometer and SEM and AC two-terminal impedance technique respectively. As the heating temperature increased the synthesized powder had the sintering behaviors to show the start of the significant shrink at temperature of about $700^{\circ}C$ and to show the end of the shrink at the temperature of about 147$0^{\circ}C$. When the pellets were sintered with the vaious times at 150$0^{\circ}C$ the temperatuer which the shrink had been already completed the grain sizes in the sintered 20 mol% Gd-doped GeO2 pellets increased with the increase of the sintering time but their electrical resis-tivities showed the minimum value at the sintering time of 10h. It is due that the pellet sintered for 10h had the minimum activation energy fior the electtrical conduction. Thus it is thought that the decrease of the activation energy with the increase of the sintering time to 10h is induced by the enhanced mi-crostructure like the decrease of pore amount and the grain growth and its increase with the sintering times more than 10h is induced by the increase of the amounts of the impurities such as Mg. Al and Si from the sintering atmosphere.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.