• Journal of Power Electronics
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• v.9 no.2
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• pp.164-172
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• 2009

Recently, 2-dimensional flat light sources have been attracting much attention for its use in LCD backlight applications because of its high luminous efficiency and uniformity. A long-gap discharge, mercury-tree flat fluorescent lamp has been developed, which shows a high brightness ($>5000\;cd/m^2$) and high luminous efficacy (60 lm/W). Additionally, it has a wide operating margin and stable driving condition with the aid of an auxiliary electrode. For driving the lamp, a narrow pulse power to maintain the glow discharge state is required. Since there has been no research for this kind of lamp driving, this paper proposes a newly developed short-pulse, high-voltage lamp-driving scheme. The proposed lamp system uses a ballast with a coupled-inductor in order to raise the short pulse voltage up to the lamp ignition level and to obtain energy-recovery action during the glow discharge mode. The operation principles are presented and also the system performances such as the lighting efficiency, spatial and angular uniformities are evaluated by hardware experiments. The results show that the proposed lighting system is a good candidate for the next-generation of LCD backlight systems.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.263-268
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• 2004

In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.90-92
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• 2001

This Paper presents a part of system study results for UPFC Pilot Plant application in Korea. The system study includes short circuit rate of Kangjin S/S which is site of UPFC Pilot Plant, ${\Delta}V/{\Delta}Q$ characteristics in STATCOM mode, P and Q flow control boundary of UPFC Pilot Plant. The system study is simulated by PSS/E Ver. 26.

• Journal of Welding and Joining
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• v.3 no.1
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• pp.40-45
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• 1985

Wire meling characteristics were examined with variation of gas formers such as $MgCO_3, CaCO_3 and Li_ 2CO_ 3$ by self-shielded flux cored arc welding. The flux cored wire of overlap type was welded by DCRP. The results obtainedareas follows. 1) Drop type was observed with no gas former, repelled type with MgCO_3$ added and short circuit type with $Li_2CO_3$ added. The variation of transfer mode was related to the blowing force of $CO_2$ gas and the surface tension of the slag. 2) Droplet size increased with adding gas formers due to the effect of $CO_2$ gas cushion. 3) Core spikes were observed more frequently with increasing the amount of gas formers.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.529-532
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• 2000

This paper addresses how to be connected with end-to-end shortcut using ATM Switched Virtual Connection (SVC) in ATM-based Multi-Protocol Label Switching (MPLS) Networks. Without additionally existing ATM Ships-in-the-Night (SIN) mode, when the stream is continuously transmitted at the same destination with the lapse of determined aging time, the connection is changed with end-to-end shortcut connection using ATM signaling. An ATM direct short circuit is performed an IP and ATM effective integration. An ATM shortcut has a number of advantages, like higher throughput, shorter end-to-end delay, reduced router load, better utilization of L2 Quality of Service (QoS) capabilities, and route optimization. In particular between other MPLS domains, this can be efficiently improved the performance of networks.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.742-747
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• 2005

Electric railroad transformer of a supply of Operation power of DC electric cars is intense fluctuation of load and flows the only big short-circuit current as a accident of the power system. it is a peculiarity more severe than general power transformer. Consequently, researches the properties about the rectifier mold transformer of DC substation and applies with data of safety of the electric railroad transformer. This paper analyzed a failure mode, the accident occurrence scenario and the be latent dangerous unit against the rectifier mold transformer of DC railway system.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.7-10
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• 2004

A new method for fabrication of transistor like structure of the bifacial solar cell using spin-on doping and electroless plating has been proposed and the basic characteristics of the bifacial cell have been investigated. It is found that 9％ increase in short circuit current is achieved with bifacial connection than the unifacial connection. Some unwanted effect of the series resistance on collection efficiency under different mode of illumination has been pointed out. Loss mechanisms inherent in the transistor like bifacial structure have also been discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Korean Chemical Engineering Research
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• v.60 no.3
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• pp.363-370
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• 2022

In this paper, an estimation algorithm for state of charge (SOC) was applied using an equivalent circuit model (ECM) and an Extended Kalman Filter (EKF) to improve the estimation accuracy of the battery system states. In particular, an observer was designed to estimate SOC along with the aged capacity. In the case of the fresh battery, when SOC was estimated by Kalman Filter (KF), the mean absolute percentage error (MAPE) was 0.27% which was smaller than MAPE of 1.43% when the SOC was calculated by the model without the observer. In the driving mode of the vehicle, the general KF or EKF algorithm cannot be used to estimate both SOC and capacity. Considering that the battery aging does not occur in a short period of time, a strategy of periodically estimating the battery capacity during charging was proposed. In the charging mode, since the current is fixed at some intervals, a strategy for estimating the capacity along with the SOC in this situation was suggested. When the current was fixed, MAPE of SOC estimation was 0.54%, and the MAPE of capacity estimation was 2.24%. Since the current is fixed when charging, it is feasible to estimate the battery capacity and SOC simultaneously using the general EKF. This method can be used to periodically perform battery capacity correction when charging the battery. When driving, the SOC can be estimated using EKF with the corrected capacity.

• Journal of IKEEE
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• v.24 no.1
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• pp.161-169
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• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.