• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.263-270
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• 2018

Recently, porous ceramic materials with anti-static performance are urgently needed for semiconductor and OLED/LCD display manufacturing industry. In this work, we fabricated porous titanium manganese oxide ceramics having the surface resistivity of $10^8-10^{10}$ ohm and enhanced mechanical strength by partial sintering method using nanosized titanium oxide. By addition of nano-sized titanium oxide in the matrix, neck formation between grains was strengthened, which remarkably increased flexural strength up to 170 MPa (@porosity: 15 %), 110 MPa (@porosity: 31 %), compared to 80 MPa (@porosity: 26 %) for pristine titanium manganese oxide ceramics. We evaluated the performances of our ceramics as air-floating module for OLED flexible display manufacturing devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.8
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• pp.1037-1043
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• 2020

This paper presents a new Physical Unclonable Function (PUF) security chip based on a low-cost, small-area, and low-power semiconductor process for IoT devices. The proposed security circuit has multiple challenge-to-response pairs (CRP) by adding the switching circuit to the cross-coupled path between two inverters of the SRAM structure and applying the challenge input. As a result, the proposed structure has multiple CRPs while maintaining the advantages of fast operating speed and small area per bit of the conventional SRAM based PUF security chip. In order to verify the performance, the proposed switched SRAM based PUF security chip with a core area of 0.095㎟ was implemented in a 180nm CMOS process. The measurement results of the implemented PUF show 4096-bit number of CRPs, intra-chip Hamming Distance (HD) of 0, and inter-chip HD of 0.4052.

• Current Applied Physics
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• v.18 no.11
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• pp.1422-1425
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• 2018

$NaTa_{1-x}Fe_xO_3$ ($0{\leq}x{\leq}0.40$) nanocubes were synthesized by a relatively low temperature hydrothermal method, using $Ta_2O_5$, $FeCl_3$ and NaOH as the precursors. The UV-vis diffuse reflectance spectra showed that $NaTa_{1-x}Fe_xO_3$ had significant visible-light-absorbing capability, and the absorption edge of $NaTaO_3$ shifted to longer wavelength with the increase of Fe dopants. Moreover, $NaTa_{1-x}Fe_xO_3$ exhibited room-temperature ferromagnetism when $Fe^{3+}$ occupied $Ta^{5+}$ sites in $NaTaO_3$ crystal lattice. The ferromagnetism is mainly attributed to the superexchange interactions between doped $Fe^{3+}$, rather than the contribution of oxygen vacancies caused by Fe doping. Therefore, Fe doping can simultaneously regulate the optical and magnetic properties of $NaTaO_3$ semiconductor, which will enable its potential applications in multifunctional optical-electronics and opticalspintronics devices.

• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.493-497
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• 2011

The basic properties and electrical characteristics of sputtering films deposited with a commercial cast target and spark plasma sintering (SPS) were compared and analyzed. The results, revealed that, the Al film prepared by heating at $60^{\circ}C/min$ (SPS process) showed a specific resistance similar to the commercial cast Al film. In addition, the results of XRD, SIMS and TEM, showed that there was not much difference in the crystal structure and impurities between the two films. Consequently, the SPS Al target was found to have properties quite similar to the commercial one and it is expected to be applied in future research to the metal wiring material for semiconductor/display devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.35-42
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• 2021

The research of amplifier have been actively conducted to replace the Traveling Wave Tube Amplifier (TWTA) in the mmWave. For Solid State Power Amplifiers (SSPA), which combine semiconductor-type devices to obtain high output, Low-loss, high-efficiency combination techniques are required to meet the required output as the output of a single relatively low device is relatively low. In this paper, we design and produce an 8-way waveguide combiner and a reflective loss of more than 20dB and a binding efficiency of 85% or more were identified. Field analysis calculates the critical power inside the combiner. It secured stable Power Ratings and built-in coupler for power monitoring to achieve miniaturization and light weight.

• Advances in nano research
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• v.13 no.3
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.641-648
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• 2023

Recently, the rapid growth of artificial intelligence among the 4th industrial revolution has progressed based on the performance improvement of semiconductor, and circuit integration. According to transistors, which help operation of internal electronic devices and equipment that have been progressed to be more complicated and miniaturized, the control of heat generation and improvement of heat dissipation efficiency have emerged as new performance indicators. The DUT(Device Under Test) Shell is equipment which detects malfunction transistor by evaluating the durability of transistor through heat dissipation in a state where the power is cut off at an arbitrary heating point applying the rating current to inspect the transistor. Since the DUT shell can test more transistor at the same time according to the heat dissipation structure inside the equipment, the heat dissipation efficiency has a direct relationship with the malfunction transistor detection efficiency. Thus, in this paper, we propose various method for PCB configuration structure to optimize heat dissipation of DUT shell and we also propose various transformation and thermal analysis of optimal DUT shell using computational fluid dynamics.