• The Korean Journal of Nuclear Medicine
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• v.38 no.2
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• pp.131-139
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• 2004

Small animal models are extensively utilized in the study of biomedical sciences. Current animal experiments and analysis are largely restricted to in vitro measurements and need to sacrifice animals to perform tissue or molecular analysis. This prevents researchers from observing in vivo the natural evolution of the process under study. Imaging techniques can provide repeatedly in vivo anatomic and molecular information noninvasively. Small animal imaging systems have been developed to assess biological process in experimental animals and increasingly employed in the field of molecular imaging studies. This review outlines the current developments in nuclear medicine imaging instrumentations including fused multi-modality imaging systems for small animal imaging.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.459-464
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• 2013

A reset-free anti-harmonic programmable multiplying delay-locked loop (MDLL) that provides flexible integer clock multiplication for high performance clocking applications is presented. The proposed MDLL removes harmonic locking problems by utilizing a simple harmonic lock detector and control logic, which allows this MDLL to change the input clock frequency and multiplication factor during operation without the use of start-up circuitry and external reset. A programmable voltage controlled delay line (VCDL) is utilized to achieve a wide operating frequency range from 80 MHz to 1.2 GHz with a multiplication factor of 4, 5, 8, 10, 16 and 20. This MDLL achieves a measured peak-to-peak jitter of 20 ps at 1.2 GHz.

• International journal of advanced smart convergence
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• v.1 no.1
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.74-81
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• 2004

We propose a novel scheme to transmit high center frequency RF signals using electroabsorption devices (EADs) as frequency converters at the transmitter and the receiver. In this approach frequency heterodyning is employed for obtaining high center frequency. With the EAD as a detector/mixer at the receiver we demonstrated a smaller conversion loss than that of the conventional modulator/mixer. With EAD as a modulator/mixer at the transmitter and with two heterodyned lasers to generate an optical local oscillator (LO), we demonstrated a large reduction (${\sim}23dB$) in conversion loss, and the transmission is not limited by the optical saturation of the EAD. This transmission scheme has optical single-side-band transmission feature which greatly relieves the fiber dispersion effect.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.277-282
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• 2008

A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.464-467
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• 2007

All image data acquisition systems for example the digital camera and digital camcorder, use the image sensor to convert the image data (light) into electronic data. These image sensors are used in satellite camera for high quality and resolution image data. There are two kinds of image sensors, the one is the CCD (charge coupled device) detector sensor and the other is the CMOS (complementary metal-oxide semiconductor) image sensor. The CCD sensor control system has more complex than the CMOS sensor control system. For the high quality image data on CCD sensor, the precise timing control signal and the several voltage sources are needed in the control system. In this paper, the comparison of the CCD with CMOS sensor, the CCD sensor characteristic, and the control system will be described.

• ETRI Journal
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• v.32 no.3
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• pp.406-413
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• 2010

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.200-209
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• 2008

This paper describes bandwidth linearization techniques in phase-locked loop (PLL) design for common-clock serial link applications. Utilizing a continuously tunable single-input dual-path LC VCO and a constant-gain phase detector, a proposed architecture is well suited to implementing PLLs that must be compliant with standards that specify minimum and maximum allowable bandwidths such as PCI Express Gen2 or FB-DIMM applications. A prototype 4.75 to 6.1-GHz PLL is implemented in 90-nm CMOS. Measurement results show that the PLL bandwidth and random jitter (RJ) variations are well regulated and that the use of a differentially controlled dual-path VCO is important for deterministic jitter (DJ) performance.

• Journal of Magnetics
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• v.7 no.1
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• pp.4-8
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• 2002

The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.161-165
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• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.