• Clean Technology
• /
• v.29 no.4
• /
• pp.255-261
• /
• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.4
• /
• pp.49-60
• /
• 2010

Semiconductor packages are increasingly moving toward miniaturization, lighter and high performance. Futhermore, packages become thinner. Thin packages will generate serious reliability problems such as warpage, crack and other failures. Reliability problems are mainly caused by the CTE mismatch of various package materials. Therefore, proper selection of the package materials and geometrical optimization is very important for controlling the warpage and the stress of the package. In this study, we investigated the characteristics of the warpage and the stress of several packages currently used in mobile devices such as CABGA, fcSCP, SCSP, and MCP. Warpage and stress distribution are analyzed by the finite element simulation. Key material properties which affect the warpage of package are investigated such as the elastic moduli, CTEs of EMC molding and the substrate. Geometrical effects are also investigated including the thickness or size of EMC molding, silicon die and substrate. The simulation results indicate that the most influential factors on warpage are EMC molding thickness, CTE of EMC, elastic modulus of the substrate. Simulation results show that warpage is the largest for SCSP. In order to reduce the warpage, DOE optimization is performed, and the optimization results show that warpage of SCSP becomes $10{\mu}m$.

• Journal of the Korean Electrochemical Society
• /
• v.5 no.3
• /
• pp.125-130
• /
• 2002

An attempt was made for the application of porous reticular metal to a heat dissipation material in semiconductor process. For this aim, the electrodeposition of Fe/Ni alloy on the porous reticular Cu has been performed to minimize the thermal expansion mismatch between Cu skeleton and electronic chip. Preliminary tests for the electrodeposition of Fe/Ni alloy layer were conducted by using standard Hull Cell to examine the effect of current density on the composition of alloy layer. It seemed that mass transfer affected significantly the composition of Fe/Ni layer due to anomalous codeposition in the electrodeposition of Fe/Ni alloy. A paddle type stirring bath, which was employed to control the mass transfer of electrolyte in the work, was found to allow the electrodeposition Fe/Ni with a precise composition. result showed that the thermal expansion of Fe/Ni alloy layer was much lower than that of pure copper. From the tests of heat dissipation by using the apparatus designed in the work the heat dissipation material fabricated in the work showed the excellent heat dissipation capacity, namely, more than two times as compared to that of pure copper plate.

• Korean Journal of Optics and Photonics
• /
• v.6 no.3
• /
• pp.188-200
• /
• 1995

A design of unit magnification 2-mirror system with high resolution is presented. It is for soft X-ray(wavelength of 13 nm) projection imaging and suitable for preparation of high density semiconductor chip. In general, a holosymmetric system with unit magnification has the advantage that both coma and distortion are completely eliminated. In our holosymmetric 2-mirror system, spherical aberration is addtionally removed by using two identical paraboloidal mirror surfaces and field curvature aberration is also corrected by balancing Petzval sum and astigmatism which depends on the distance between two mirrors, so that the system is a aplanatic flat-field paraboloidal 2-mirror holosymmetric system. This 2-mirror system is small in size, and has a simple configuration with rotational symmetry about optical axis, and has also small central obscuration. Residual finite aberrations, spot diagrams, and diffraction-based MTF's are analyzed for the check of performances as soft X-ray lithography projection system. As a result, the image sizes for the resolutions of$0.25\mum$and $0.18\mum$are 4.0 mm, 2.5 mm respectively, and depths of focus for those are $2.5\mum$, $2.4\mum$respectively. This system should be useful in the fabrication of 256 Mega DRAM or 1 Giga DRAM. DRAM.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.2
• /
• pp.7-15
• /
• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.6
• /
• pp.604-609
• /
• 2019

In this study, we fabricated a capacitive humidity sensor with interdigitated (IDT) electrodes using a thermosetting polyimide as a humidifying material. First, the number of electrodes, thickness, and spacing of the polyimide film were optimized, and a mask was designed and fabricated. The sensor was fabricated on a silicon substrate using semiconductor processing equipment. The area of the sensor was $1.56{\times}1.66mm^2$, and the width of the electrode and the gap between the electrodes were each $3{\mu}m$. The number of electrodes was 166, and the length of an electrode was 1.294 mm for the sensitivity of the sensor. The sensor was then packaged on a PCB for measurement. The sensor was inserted into a chamber environment with a temperature of $25^{\circ}C$ and connected to an LCR meter to measure the change in capacitance at relative humidity (RH) of 20% to 90%, 1 V, and 20 kHz. The results showed a sensitivity of 26fF/%RH, linearity of < ${\pm}2%RH$, and hysteresis of < ${\pm}2.5%RH$.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
• /
• v.7 no.1
• /
• pp.219-227
• /
• 2017

Current military command information system uses electronic equipment a lot on which semiconductor chip is attached. It seems its' importance will increase more with latest information communication technology developing. Electronic equipment which uses electricity contains regular tolerance to high output electric signal. And EMC specification is the standardized of this electronic equipment's tolerance. On the other hand, the Institute of Atomic Energy Research has ever declared that high output electromagnetic pulse(EMP) will be broken out within the radius of 170Km when 10kt nuclear explosion occurs at an altitude of 40Km above Seoul. Then, the region suffer from the damage of most electronic equipments. Therefore, the norm to protect the influences in that case is defined by EMP protection specification. Most common electronic equipments meet the EMC norm, but there is no way to check whether they meet the EMP norm or not. That is because it is difficult to check whether they meet EMP protection norm and is on the matter of cost. Except inevitable cases, there is no review of checking whether they meet the norm or not. Considering the above, in this research, we speculate about the measures to improve military EMP protection ability by analyzing the EMC-EMP correlation and checking the EMP protection ability of general electronic equipment through the analysis.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.7
• /
• pp.1218-1226
• /
• 2008

With the development of semiconductor integrated technology and with the increasing use of multimedia functions in computer, more functions have been implemented as hardware. Nowadays, most microprocessors beyond 32 bits generally implement an integer multiplier as hardware. However, as for a divider, only specific microprocessor implements traditional SRT algorithm as hardware due to complexity of implementation and slow speed. This paper suggested an algorithm that uses a multiplier, 'w bit $\times$ w bit = 2w bit', to process $\frac{N}{D}$ integer division. That is, the reciprocal number D is first calculated, and then multiply dividend N to process integer division. In this paper, when the divisor D is '$D=0.d{\times}2^L$, 0.5 < 0.d < 1.0', approximate value of ' $\frac{1}{D}$', '$1.g{\times}2^{-L}$', which satisfies ' $0.d{\times}1.g=1+e$, $e<2^{-w}$', is defined as over reciprocal number and then an algorithm for over reciprocal number is suggested. This algorithm multiplies over reciprocal number '$01.g{\times}2^{-L}$' by dividend N to process $\frac{N}{D}$ integer division. The algorithm suggested in this paper doesn't require additional revision, because it can calculate correct reciprocal number. In addition, this algorithm uses only multiplier, so additional hardware for division is not required to implement microprocessor. Also, it shows faster speed than the conventional SRT algorithm and performs operation by word unit, accordingly it is more suitable to make compiler than the existing division algorithm. In conclusion, results from this study could be used widely for implementation SOC(System on Chip) and etc. which has been restricted to microprocessor and size of the hardware.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.5
• /
• pp.25-33
• /
• 2011

This work proposes a skinny-type 10b 50MS/s 0.13um CMOS three-step pipeline ADC for CIS applications. Analog circuits for CIS applications commonly employ a high supply voltage to acquire a sufficiently acceptable dynamic range, while digital circuits use a low supply voltage to minimize power consumption. The proposed ADC converts analog signals in a wide-swing range to low voltage-based digital data using both of the two supply voltages. An op-amp sharing technique employed in residue amplifiers properly controls currents depending on the amplification mode of each pipeline stage, optimizes the performance of op-amps, and improves the power efficiency. In three FLASH ADCs, the number of input stages are reduced in half by the interpolation technique while each comparator consists of only a latch with low kick-back noise based on pull-down switches to separate the input nodes and output nodes. Reference circuits achieve a required settling time only with on-chip low-power drivers and digital correction logic has two kinds of level shifter depending on signal-voltage levels to be processed. The prototype ADC in a 0.13um CMOS to support 0.35um thick-gate-oxide transistors demonstrates the measured DNL and INL within 0.42LSB and 1.19LSB, respectively. The ADC shows a maximum SNDR of 55.4dB and a maximum SFDR of 68.7dB at 50MS/s, respectively. The ADC with an active die area of 0.53$mm^2$ consumes 15.6mW at 50MS/s with an analog voltage of 2.0V and two digital voltages of 2.8V ($=D_H$) and 1.2V ($=D_L$).

• Journal of the Korea Society of Computer and Information
• /
• v.16 no.7
• /
• pp.1-11
• /
• 2011

Many researchers have studied on the methods to improve the processor performance. However, high integrated semiconductor technology for improving the processor performance causes many problems such as battery life, high power density, hotspot, etc. Especially, as hotspot has critical impact on the reliability of chip, thermal problems should be considered together with performance and power consumption when designing high-performance processors. To alleviate the thermal problems of processors, there have been various researches. In the past, mechanical cooling methods have been used to control the temperature of processors. However, up-to-date microprocessors causes severe thermal problems, resulting in increased cooling cost. Therefore, recent studies have focused on architecture-level thermal-aware design techniques than mechanical cooling methods. Even though architecture-level thermal-aware design techniques are efficient for reducing the temperature of processors, they cause performance degradation inevitably. Therefore, if the mechanical cooling methods can manage the thermal problems of processors efficiently, the performance can be improved by reducing the performance degradation due to architecture-level thermal-aware design techniques such as dynamic thermal management. In this paper, we analyze the cooling efficiency of high-performance multicore processors according to mechanical cooling methods. According to our experiments using air cooler and liquid cooler, the liquid cooler consumes more power than the air cooler whereas it reduces the temperature more efficiently. Especially, the cost for reducing $1^{\circ}C$ is varied by the environments. Therefore, if the mechanical cooling methods can be used appropriately, the temperature of high-performance processors can be managed more efficiently.