• Title/Summary/Keyword: Semiconductor amplifier

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Range-Scaled 14b 30 MS/s Pipeline-SAR Composite ADC for High-Performance CMOS Image Sensors

  • Park, Jun-Sang;Jeong, Jong-Min;An, Tai-Ji;Ahn, Gil-Cho;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.70-79
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    • 2016
  • This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS

  • Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.272-281
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    • 2013
  • This paper presents low power frequency shift keying (FSK) transmitter using all digital PLL (ADPLL) for smart utility network (SUN). In order to operate at low-power and to integrate a small die area, the ADPLL is adopted in transmitter. The phase noise of the ADPLL is improved by using a fine resolution time to digital converter (TDC) and digitally controlled oscillator (DCO). The FSK transmitter is implemented in $0.18{\mu}m$ 1-poly 6-metal CMOS technology. The die area of the transmitter including ADPLL is $3.5mm^2$. The power consumption of the ADPLL is 12.43 mW. And, the power consumptions of the transmitter are 35.36 mW and 65.57 mW when the output power levels are -1.6 dBm and +12 dBm, respectively. Both of them are supplied by 1.8 V voltage source. The frequency resolution of the TDC is 2.7 ps. The effective DCO frequency resolution with the differential MOS varactor and sigma-delta modulator is 2.5 Hz. The phase noise of the ADPLL output at 1.8 GHz is -121.17 dBc/Hz with a 1 MHz offset.

Design of OP-AMP using MOSFET of Sub-threshold Region (Sub-threshold 영역의 MOSFET 동작을 이용한 OP-AMP 설계)

  • Cho, Tae-Il;Yeo, Sung-Dae;Cho, Seung-Il;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.7
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    • pp.665-670
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    • 2016
  • In this paper, we suggest the design of OP-AMP using MOSFET in the operation of sub-threshold condition as a basic unit of an IoT. The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about $1.3{\mu}W$ and the active size for an integration was measured with $64{\mu}m{\times}105{\mu}m$. It is expected that the proposed circuit is applied to the low power sensor network for IoT.

TID and SEL Testing on OP-Amp. of DC/DC Power Converter (DC/DC 컨버터용 OP-Amp.의 TID 및 SEL 실험)

  • Lho, Young Hwan
    • Journal of the Korean Society of Radiology
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    • v.11 no.3
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    • pp.101-108
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    • 2017
  • DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The advanced DC/DC converter uses a PWM-IC with OP-Amp. (Operational Amplifier) to control a MOSFET (metal-oxide semiconductor field effect transistor), which is a switching component, efficiently. In this paper, it is shown that the electrical characteristics of OP-Amp. are affected by radiations of ${\gamma}$ rays using $^{60}Co$ for TID (Total Ionizing Dose) testing and 5 heavy ions for SEL (Single Event Latch-up) testing. TID testing on OP-Amp. is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the OP-Amp. operation is evaluated SEL testing after implementation of the controller board.

Implementation of Impedance Method to Estimate Blood Flow Variation with Cuff Pressure Change (커프 압력 조절에 따른 혈류량 변화 평가를 위한 임피던스법의 구현)

  • Jeong, Do-Un;Bae, Jin-Woo;Shon, Jung-Man;Yae, Su-Yung;Choi, Byeong-Cheol;Nam, Ki-Gon;Kim, Cheol-Han;Jeon, Gye-Rok
    • Journal of Sensor Science and Technology
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    • v.13 no.6
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    • pp.462-472
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    • 2004
  • In this study, we measured the blood flow on arm by non-invasive method and implemented a system to measure variation of the blood flow by estimating bio-electrical impedance and arterial pressure according to cuff pressure. The implemented system measured impedance variation according to pressure variation applied by artificial cuff pressure on the measuring position. The system consisted of pressure measuring part and impedance measuring part using 4-electrode method. Pressure measuring part was composed of semiconductor pressure sensor and electronic circuit for signal processing of sensor output signal. In addition, impedance measuring part was composed of constant current source circuit and lock-in amplifier for detecting impedance signal. We conducted experiments of impedance measuring part using standard resistance for performance evaluation of the implemented system. In addition we experimented to estimate variation of the blood flow by measuring impedances of the experimental group. We estimated ratio of the blood flow resistance using mean arterial pressure and variation of the blood flow. As a result the ratio of the blood flow resistance and variation of blood flow were in an inverse relationship with each other and the correlation coefficient was -0.96776.

A 60-GHz LTCC SiP with Low-Power CMOS OOK Modulator and Demodulator

  • Byeon, Chul-Woo;Lee, Jae-Jin;Kim, Hong-Yi;Song, In-Sang;Cho, Seong-Jun;Eun, Ki-Chan;Lee, Chae-Jun;Park, Chul-Soon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.229-237
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    • 2011
  • In this paper, a 60 GHz LTCC SiP with low-power CMOS OOK modulator and demodulator is presented. The 60 GHz modulator is designed in a 90-nm CMOS process. The modulator uses a current reuse technique and only consumes 14.4-mW of DC power in the on-state. The measured data rate is up to 2 Gb/s. The 60 GHz OOK demodulator is designed in a 130nm CMOS process. The demodulator consists of a gain boosting detector and a baseband amplifier, and it recovers up to 5 Gb/s while consuming low DC power of 14.7 mW. The fabricated 60 GHz modulator and demodulator are fully integrated in an LTCC SiP with 1 by 2 patch antenna. With the LTCC SiP, 648 Mb/s wireless video transmission was successfully demonstrated at wireless distance of 20-cm.

Design of 77 GHz Radar Transmitter Using 13 GHz CMOS Frequency Synthesizer and Multiplier (13 GHz CMOS 주파수 합성기와 체배기를 이용한 77 GHz 레이더 송신기 설계)

  • Song, Ui-Jong;Kang, Hyun-Sang;Choi, Kyu-Jin;Cui, Chenglin;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.11
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    • pp.1297-1306
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    • 2012
  • This work presents a 77 GHz radar transmitter for the automotive radar system. An integrated 13 GHz frequency synthesizer fabricated using 130 nm RF CMOS process drives a commercial W-band compound semiconductor monolithic multifunction amplifier(MPA), which includes a frequency multiplier by six to generate 77 GHz transmitting signal. The 13 GHz frequency synthesizer includes a high efficiency injection buffer of 4 dBm output power to drive the MPA. The output power of 77 GHz radar transmitter is higher than 13.99 dBm and the magnitude of the reference spur relative to the carrier is -36.45 dBc. The phase noise is -81 dBc/Hz at 1 MHz offset frequency from the carrier.

Capacitive Readout Circuit for Tri-axes Microaccelerometer with Sub-fF Offset Calibration

  • Ouh, Hyun Kyu;Choi, Jungryoul;Lee, Jungwoo;Han, Sangyun;Kim, Sungwook;Seo, Jindeok;Lim, Kyomuk;Seok, Changho;Lim, Seunghyun;Kim, Hyunho;Ko, Hyoungho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.83-91
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    • 2014
  • This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

2.5 Gbps Hybrid PON link Using RSOA Based WDM-PON and a Reach Extender (RSOA기반 WDM-PON 링크와 Reach Extender를 이용한 2.5 Gbps 하이브리드 PON 링크 기술)

  • Kim, Kwang-Ok;Lee, Jie-Hyun;Lee, Sang-Soo;Jang, Youn-Seon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.6B
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    • pp.583-591
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    • 2011
  • We presents the architecture of the 2.5 Gbps hybrid PON link which can increase of the transmission distance and link capability, and split ratio by using a colorless DWDM-PON and O/E/O based reach extender into an existing G-PON link. A RSOA based DWDM-PON to apply the feeder fiber can provide a link capacity of 32 larger that of a legacy G-PON. The reach extender converts the wavelength of DWDM-PON to G-PON through GTC frame regeneration at the remote node, and can provide a burst reset signal in order to extract upstream burst signal, simultaneously. The proposed hybrid PON enable a legacy G-PON to operate over the maximum 60 km distance with a 128-way split per WDM wavelength.

SENSITIVITY ANALYSIS TO EVALUATE THE TRANSPORT PROPERTIES OF CdZnTe DETECTORS USING ALPHA PARTICLES AND LOW-ENERGY GAMMA-RAYS

  • Kim, Kyung-O;Ahn, Woo-Sang;Kwon, Tae-Je;Kim, Soon-Young;Kim, Jong-Kyung;Ha, Jang-Ho
    • Nuclear Engineering and Technology
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    • v.43 no.6
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    • pp.567-572
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    • 2011
  • A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.