• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.79-82
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• 1995

The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.51-56
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• 2016

This paper proposes a new image enhancement method for an infrared thermal image. The proposed method uses both Laplacian and Prewitt edge detectors. Without a visible light, it uses an infrared image for the edge detection. The method subtracts contour images from the infrared thermal image. It results black contours of objects in the infrared thermal image. That makes the objects in the infrared thermal image distinguished clearly. The proposed method is implemented using C language in an embedded Linux system for a high-speed real-time image processing. Experiments were conducted by using various infrared thermal images. The results show that the proposed method is successful for image enhancement of an infrared thermal image.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.89-94
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• 2011

In recent years there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, a numerical analysis model of cooling system in thermal NIL was development by CAD/CAE program and the performance of the cooling system was analyzed by the model. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the case that the cooling material is replaced by liquid nitrogen is investigated.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.515-518
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• 2006

The microstructure of $ZrO_2$ toughened $Al_2O_3$ ceramics was carefully controlled so as to obtain dense and fine-grained ceramics, thereby improving the properties and reliability of the ceramics for capillary applications in semiconductor bonding technology. $Al_2O_3-ZrO_2(Y_2O_3)$ composite was produced via Ceramic Injection Molding (CIM) technology, followed by Sinter-HIP process. Room temperature strength, hardness, Young's modulus, thermal expansion coefficient and toughness were determined, as well as surface strengthening induced by the fine grained homogenous microstructure and the thermal treatment. The changes in alumina/zirconia grain size, sintering condition and HIP treatment were found to be correlated.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• International Journal of Control, Automation, and Systems
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• v.6 no.2
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• pp.160-170
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• 2008

Temperature control of an enclosed thermal system which has many applications including Rapid Thermal Processing (RTP) of semiconductor wafers showed an input-constraint violation for nonlinear controllers due to inherent strong coupling between the elements [1]. In this paper, a constrained nonlinear optimal control design is developed, which accommodates input constraints using the linear algebraic equivalence of the nonlinear controllers, for the temperature control of an enclosed thermal process. First, it will be shown that design of nonlinear controllers is equivalent to solving a set of linear algebraic equations-the linear algebraic equivalence of nonlinear controllers (LAENC). Then an input-constrained nonlinear optimal controller is designed based on that LAENC using the constrained linear least squares method. Through numerical simulations, it is demonstrated that the proposed controller achieves the equivalent performances to the classical nonlinear controllers with less total energy consumption. Moreover, it generates the practical control solution, in other words, control solutions do not violate the input-constraints.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2004.10a
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• pp.50-61
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• 2004

Nowadays Laser Controllable Thermo-cleaving is the most promising method of cutting FPD(Flat Panel Display) glass in mass-production line. And this method can be used to cut other brittle materials such as quartz, sapphire, ceramic and semiconductor. The concept of this method is shown in Picture 1. Laser beam heats glass up to strain point not to melting point and cooling system chills glass to make maximum thermal stress in glass and then the thermal stress generates micro thermal crack in other words blind crack. Laser Controllable Thermo-cleaving controls the thermal stress to optimize the blind crack up to level of mass-production line.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.37-42
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• 2012

Nanoimprint lithography (NIL) has attracted broad interest as a low cost method to define nanometer scale patterns in recent years. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, the performance of the cooling system of thermal NIL is numerically investigated by SolidWorks Flow Simulation program. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the effects of the change of flow velocity and cooler location on the cooling performance are investigated. For the 6 cases (0.1 m/s, 0.5 m/s, 1 m/s, 3 m/s, 5 m/s, 10 m/s) of flow velocity and for the 6 cases of distances (50 mm, 40 mm, 30 mm, 20 mm, 10 mm, 1 mm) of cooler location, the heat conjugated flow analyses are performed and discussed.