• Title/Summary/Keyword: Semiconductor Testing

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The Implementation of Testing Board forSingle Event Upsets

  • Lho, Young-Hwan;Kim, Ki-Yup
    • International Journal of Aeronautical and Space Sciences
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    • v.5 no.2
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    • pp.28-34
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    • 2004
  • One of the major problem encountered in nuclear plants and satellites design isEMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility).Here, our focus is to implement the test board for checking SEU (Single EventUpsets); the effects of protons on the electronic system. The SEU results from thelevel change of stored information due to photon radiation and temperature in thespace environment. The impact of SEU on PLD (Programmable Logic Devices)technology is most apparent in ROM/SRAM/DRAM devices wherein the state ofstorage cell can be upset. In this paper, a simple and powerful test techniques issuggested, and the results are presented for the analysis and future reference. In ourexperiment, the proton radiation facilitv (having the energy of 50 MeV with a beamcurrent of 60 uA of cyclotron) available at KIRAMS (Korea Institute of RadiologicalMedical Sciences) has been applied on a commercially available SRAM manufacturedby Hynix Semiconductor Company.

Measurements of Evanescent Wave using a Mano-size Optical Probe (나노 사이즈 광프로브에 의한 에버네슨트파의 측정)

  • 최영규
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.1
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    • pp.30-35
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    • 2004
  • We have carried out a basic experiment in order to develope a super high-resolution optical microscope which transcend the limitation of diffraction and the wavelength of lightwave. The image of this scope is composed by measuring the evanescent wave which is localized on the surface of the testing materials. A detecting probe was fabricated with a single mode optical fiber to be sharpened by the chemical etching, and drived by PZT. The standing wave of $0.33\mu\textrm{m}$ wavelength evanescent wave which was generated from the $0.78\mu\textrm{m}$-wavelength semiconductor laser was detected by the $0.5\mu\textrm{m}$-thickness optical fiber probe.

Monolithic Integration of Arrays of Single Walled Carbon Nanotubes and Sheets of Graphene

  • Hong, Seok-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.68.2-68.2
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    • 2012
  • We present a scheme for monolithically integrating aligned arrays of single walled carbon nanotubes (SWNTs) with sheets of graphene, for use in electronic devices. Here, the graphene and arrays of SWNTs are formed separately, using chemical vapor deposition techniques onto different, optimized growth substrates. Techniques of transfer printing provide a route to integration, yielding two terminal devices and transistors in which patterned structures of graphene form the electrodes and the SWNTs arrays serve as the semiconductor. Electrical testing and analysis reveal the properties of optically transparent transistors that use this design, thereby giving insights into the nature of contacts between graphene and SWNTs.

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Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

  • Kim, Sunk-Won;Lee, Hyong-Min;Lee, Hyun-Joong;Woo, Jong-Kwan;Cheon, Jun-Ho;Kim, Hwan-Yong;Park, Young-June;Kim, Su-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.302-308
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    • 2011
  • In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flip-flop based on a sense amplifier and a photon-emitting device. This method can be used even with deep-submicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 ${\mu}m$ CMOS process.

LCD Cell Aging Tester

  • Son, Hyuk;Baek, Sung-Sik;Oh, Hyeong-Geun;Choi, Byoung-Deog
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1383-1385
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    • 2009
  • This paper suggests that testing method and equipment structure to detect potential failures of LCD cells. LCD Cell Aging Tester is the unique process to detect failures related with ASG circuits. This system consists of four components that is Aging chamber, work table, probe contact unit, and pattern generator. The key factor of the concept is temperature aging and HVS driving. Complicated combination of test parameters including voltage, temperature and frequency provided practical burn-in conditions eligible for prediction of mass production.

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SOC Test Compression Scheme Sharing Free Variables in Embedded Deterministic Test Environment

  • Wang, Weizheng;Cai, Shuo;Xiang, Lingyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.397-403
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    • 2015
  • This paper presents a new SOC test compression scheme in Embedded Deterministic Test (EDT) compression environment. Compressed test data is brought over the TAM from the tester to the cores in SOC and decompressed in the cores. The proposed scheme allows cores tested at the same time to share some test channels. By sharing free variables in these channels across test cubes of different cores decompressed at the same time, high encoding efficiency is achieved. Moreover, no excess control data is required in this scheme. The ability to reuse excess free variables eliminates the need for high precision in matching the number of test channels with the number of care bits for every core. Experimental results obtained for some SOC designs illustrate effectiveness of the proposed test application scheme.

Numerical Analysis of Micro-jet Array Cooling Device with Various Configurations

  • Jung, Yang-Ki;Lee, In-Chan;Ma, Tae-Young
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.2
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    • pp.39-45
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    • 2005
  • Numerical and visualization procedures are used in a finite difference grid to analyze and better understand the heat transfer in the MEMS based air micro-jet array (MIA) impingement cooling device. The Navier-Stokes (NS) equations with incompressible flow are solved using an implicit procedure. The temperature contour and velocity vector visualization diagrams are used for illustration. The computed temperature distribution at the bottom of the MIA is in good agreement with the experimental measurement data. The parameters are investigated to improve the efficiency of heat transfer in the MIA. The optimum configuration of the MIA is suggested. The present modeling explains the flow phenomenon and yields valuable information to understand the flow and heat transfer in MIA.

Consolidation of Thermoelectric Semiconductor Powder by MPC and Their Microstructure (MPC 공정에 의한 열전반도체 분말의 성형 및 미세조직)

  • Han, Tae-Bong;Hong, Soon-Jik
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2008.05a
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    • pp.525-527
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    • 2008
  • N-Type $SbI_3$-doped $95%{Bi_2}{Te_3}-5%{Bi_2}{Se_3}$ compounds were prepared by a gas atomization and Magnetic Pulsed Compaction process. The dynamic recrystallization and thermoelectric properties of the MPCed bulks with consolidation temperatures and times were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to dynamic recrystallization during hot MPC. This research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC).

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Economic Scale of Radiation Application in Japan

  • Kume, Tamikazu
    • Journal of Radiation Industry
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    • v.5 no.3
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    • pp.191-196
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    • 2011
  • The economic scale of nuclear application is a good indicator to show how the radiation technology is useful and contribute to improve public welfare and living standard. Recent research in Japan shows that the economic scale of nuclear field was 4,112 B¥ for radiation application(46%) and 4,741 B¥ for nuclear energy (54%) playing a role of "two wheels of one cart" in nuclear field and the total 8,853 B¥ constitutes 1.8% of gross domestic products (GDP). The radiation application consisted of 2,295 B¥ (56%) in industry (semiconductor, sterilization, nondestructive testing, radiation processing of tires, etc.), 1,538 B¥ (37%) in medicine (therapy and diagnosis such as X-ray, nuclear medicine, computed tomography, etc.) and 279 B¥ (7%) in agriculture (mutation breeding, food irradiation, sterile insect technique, etc.). Radiation application by ${\gamma}$-ray, electron beam and ion beam is steadily increasing in Japan.

3-D Analysis of Semiconductor Surface by Using Photoacoustic Microscopy (광음향 현미경법을 이용한 반도체 표면의 3차원적 구조 분석)

  • Lee, Eung-Joo;Choi, Ok-Lim;Lim, Jong-Tae;Kim, Ji-Woong;Choi, Joong-Gill
    • Journal of the Korean Chemical Society
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    • v.48 no.6
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    • pp.553-560
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    • 2004
  • In this experiment, a three dimensional structure analysis was carried out to examine the surface defects of semiconductor made artificially on known scale. It was investigated the three dimensional imaging according to the sample depth and the thermal diffusivity as well as the carrier transport properties. The thermal diffusivity measurement of the intrinsic GaAs semiconductor was also analyzed by the difference of frequency-dependence photoacoustic signals from the sample surface of different conditions. Thermal properties such as thermal diffusion length or thermal diffusivity of the Si wafer with and without defects on the surface were obtained by interpreting the frequency dependence of the PA signals. As a result, the photoacoustic signal is found to have the dependency on the shape and depth of the defects so that their structure of the defects can be analyzed. This method demonstrates the possibility of the application to the detection of the defects, cracks, and shortage of circuits on surface or sub-surface of the semiconductors and ceramic materials as a nondestructive testing(NDT) and a nondestructive evaluation(NDE) technique.