• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.271-274
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• 2002

In this study, we fabricated the semiconductor laser for optical sensor with 1.55${\mu}{\textrm}{m}$wavelength region. In order to suppress lasing oscillation and to reduce the reflectivity, the devices of bending type were designed and fabricated. Their output power were 1.6㎽ at a pulse drive current of 100㎃. When the fabricated device was applied to optical fiber gyroscope, the output power of optical fiber was 540㎻ at a CW drive current of 100㎃, the full width at half maximum spectral width was 53nm. And the random-walk coefficient was measured to be 2.5$\times$10­$^3$deg/√hr, the gyro output drift was also found to be 0.3 deg/hr. So we confirmed the possibility of application to use for light source of optical fiber gyroscope.

• Journal of Biomedical Engineering Research
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• v.24 no.4
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• pp.319-328
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• 2003

The purpose of this paper is to develop a medical laser system using the semiconductor diode laser in order to photodynamic cancel therapy as a light source. The ideal light source for photodynamic therapy would be a homogeneous nondiverging light with variable spot size and specific wavelength with stability. After due consideration in this point, in this paper, we used a diode laser resonator of 635nm wavelength. The development laser system have a statistical laser out beam with accuracy control using the constant current control of method and clinic-friendly with compact. In order to protect the diode resonator from the over-current, the rush-current and electrical fault, we specially designed. The most importance therapeutic factor are the radiation mode for cancer therapy. So we developed the radiation mode of CW(Continuous Wave), long pulse, short pulse, and burst pulse and can adjust the exposure time from several milli-second to several minute. The experimental result shows that laser beam power was increased linear from 10mW to 300mW according to the increasing input current and the increasing exposure time. The developed new compact diode laser system have a stability of output power and specific wavelength with easy control and transportable for many applications of PDT.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.111-115
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• 2009

We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{\alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{\times}10^{-5}$ cm respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.186-189
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.69-70
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• 2000

There are currently considerable interest in the applications of conjugated polymers, oligomers, and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study, pentacene thin-film transistors (TFTs) were fabricated on glass substrate. Aluminums were used for gate electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching (R.I.E). Gold was used for the electrodes of source and drain. The active semiconductor pentacene layer was thermally evaporated in vacuum at a pressure of about $10^{-8}$ Torr and a deposition rate $0.3{\AA}/s$. The fabricated devices exhibited the field-effect mobility as large as 0.07 $cm^2/V.s$ and on/off current ratio as larger than $10^7$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

• Journal of the Korea Safety Management & Science
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• v.17 no.3
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• pp.355-362
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• 2015

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.