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Analytical Formula of the Excess Noise in Homogeneous Semiconductors  

Park, Chan-Hyeong (Department of Electronics and Communications Engineering, Kwangwoon University)
Hong, Sung-Min (School of Electrical Engineering, Seoul National University)
Min, Hong-Shick (School of Electrical Engineering, Seoul National University)
Park, Young-June (School of Electrical Engineering, Seoul National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.9, 2008 , pp. 8-13 More about this Journal
Abstract
Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.
Keywords
Noise; semiconductor devices; excess noise; impedance field method; diffusion noise source;
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