• Title/Summary/Keyword: Semiconductor Die

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Manufacturing of GaAs MMICs for Wireless Communications Applications

  • Ho, Wu-Jing;Liu, Joe;Chou, Hengchang;Wu, Chan Shin;Tsai, Tsung Chi;Chang, Wei Der;Chou, Frank;Wang, Yu-Chi
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.3
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    • pp.136-145
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    • 2006
  • Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

A Study on optical glass polishing using Fixed Abrasive Pad (고정입자패드를 이용한 광학 유리 폴리싱에 관한 연구)

  • 최재영;김초윤;박재홍;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.78-81
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    • 2003
  • Polishing Processes are widely used in the glass, optical, die and semiconductor industry and are conventionally carried out using abrasive slurry and a polishing pad. But abrasive slurry process has a weak point that is high cost of handling of used slurry and hard controllability of slurry. Recently, some researches have attempted to solve these problems and one method is the development of a fixed abrasive pad. FAP has a couple of advantages including clean environment, lower CoC, easy controllability and higher form accuracy. But FAP also has a weak point that is need of dressing because of glazing and loading. The paper introduces the basic concept and fabrication technique of FAP using hydrophilic polymers with swelling characteristics in water and explains the self-conditioning phenomenon. Experimental results demonstrate to achieve nano surface roughness of soda lime glass for optical application

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Development of Seesaw-Type CSP Solder Ball Loader (CSP용 시소타입 로딩장치의 개발)

  • Lee, J.H.;Koo, H.M.;Woo, Y.H.;Lee, C.W.;Shin, Y.E.
    • Proceedings of the KSME Conference
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    • 2000.04a
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    • pp.873-878
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    • 2000
  • Semiconductor packaging technology is changed rapidly according to the trends of the micro miniaturization of multimedia and information equipment. For I/O limitation and fine pitch limitation, DIP and SOP/QFP are replaced by BGA/CSP. This is one of the surface mount technology(SMT). Solder ball is bumped n the die pad and connected onto mounting board. In ball bump formation, vacuum suction type ball alignment process is widely used, However this type has some problems such as ionization, static electricity and difficulty of fifo(first-input first-out) of solder balls. Seesaw type is reducing these problems and has a structural simplicity and economic efficiency. Ball cartridge velocity and ball aligned plate angle are Important variables to improve the ball alignment Process. In this paper, seesaw-type CSP solder ball loader is developed and the optimal velocity and plate angle are proposed.

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Differential Burn-in and Reliability Screening Policy Using Yield Information Based on Spatial Stochastic Processes (공간적 확률 과정 기반의 수율 정보를 이용한 번인과 신뢰성 검사 정책)

  • Hwang, Jung Yoon;Shim, Younghak
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.35 no.4
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    • pp.1-9
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    • 2012
  • Decisions on reliability screening rules and burn-in policies are determined based on the estimated reliability. The variability in a semiconductor manufacturing process does not only causes quality problems but it also makes reliability estimation more complicated. This study investigates the nonuniformity characteristics of integrated circuit reliability according to defect density distribution within a wafer and between wafers then develops optimal burn-in policy based on the estimated reliability. New reliability estimation model based on yield information is developed using a spatial stochastic process. Spatial defect density variation is reflected in the reliability estimation, and the defect densities of each die location are considered as input variables of the burn-in optimization. Reliability screening and optimal burn-in policy subject to the burn-in cost minimization is examined, and numerical experiments are conducted.

Voltage Optimization of Power Delivery Networks through Power Bump and TSV Placement in 3D ICs

  • Jang, Cheoljon;Chong, Jong-Wha
    • ETRI Journal
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    • v.36 no.4
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    • pp.643-653
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    • 2014
  • To reduce interconnect delay and power consumption while improving chip performance, a three-dimensional integrated circuit (3D IC) has been developed with die-stacking and through-silicon via (TSV) techniques. The power supply problem is one of the essential challenges in 3D IC design because IR-drop caused by insufficient supply voltage in a 3D chip reduces the chip performance. In particular, power bumps and TSVs are placed to minimize IR-drop in a 3D power delivery network. In this paper, we propose a design methodology for 3D power delivery networks to minimize the number of power bumps and TSVs with optimum mesh structure and distribute voltage variation more uniformly by shifting the locations of power bumps and TSVs while satisfying IR-drop constraint. Simulation results show that our method can reduce the voltage variation by 29.7% on average while reducing the number of power bumps and TSVs by 76.2% and 15.4%, respectively.

A Low Power, Small Area Cyclic Time-to-Digital Converter in All-Digital PLL for DVB-S2 Application

  • Kim, Hongjin;Kim, SoYoung;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.2
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    • pp.145-151
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    • 2013
  • In this paper, a low power, small area cyclic time-to-digital converter in All-Digital PLL for DVB-S2 application is presented. Coarse and fine TDC stages in the two-step TDC are shared to reduce the area and the current consumption maintaining the resolution since the area of the TDC is dominant in the ADPLL. It is implemented in a 0.13 ${\mu}m$ CMOS process with a die area of 0.12 $mm^2$. The power consumption is 2.4 mW at a 1.2 V supply voltage. Furthermore, the resolution and input frequency of the TDC are 5 ps and 25 MHz, respectively.

High-density Through-Hole Interconnection in a Silicon Substrate

  • Sadakata, Nobuyuki
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.09a
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    • pp.165-172
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    • 2003
  • Wafer-level packaging technology has become established with increase of demands for miniaturizing and realizing lightweight electronic devices evolution. This packaging technology enables the smallest footprint of packaged chip. Various structures and processes has been proposed and manufactured currently, and products taking advantages of wafer-level package come onto the market. The package enables mounting semiconductor chip on print circuit board as is a case with conventional die-level CSP's with BGA solder bumps. Bumping technology is also advancing in both lead-free solder alternative and wafer-level processing such as stencil printing using solder paste. It is known lead-free solder bump formation by stencil printing process tend to form voids in the re-flowed bump. From the result of FEM analysis, it has been found that the strain in solder joints with voids are not always larger than those of without voids. In this paper, characteristics of wafer-level package and effect of void in solder bump on its reliability will be discussed.

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Development of CMP Pad with Micro Structure on the Surface (마이크로 표면 구조물을 갖는 CMP 패드 제작 기술 개발)

  • 최재영;정성일;박기현;정해도;박재홍;키노시타마사하루
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.5
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    • pp.32-37
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    • 2004
  • Polishing processes are widely used in the glass, optical, die and semiconductor industries. Chemical Mechanical Polishing (CMP) especially is becoming one of the most important ULSI processes for the 0.25m generation and beyond. CMP is conventionally carried out using abrasive slurry and a polishing pad. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. This paper introduces the basic concept and fabrication technique of the next generation CMP pad using micro-molding method to obtain uniform protrusions and pores on the pad surface.

Wafer bin map failure pattern recognition using hierarchical clustering (계층적 군집분석을 이용한 반도체 웨이퍼의 불량 및 불량 패턴 탐지)

  • Jeong, Joowon;Jung, Yoonsuh
    • The Korean Journal of Applied Statistics
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    • v.35 no.3
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    • pp.407-419
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    • 2022
  • The semiconductor fabrication process is complex and time-consuming. There are sometimes errors in the process, which results in defective die on the wafer bin map (WBM). We can detect the faulty WBM by finding some patterns caused by dies. When one manually seeks the failure on WBM, it takes a long time due to the enormous number of WBMs. We suggest a two-step approach to discover the probable pattern on the WBMs in this paper. The first step is to separate the normal WBMs from the defective WBMs. We adapt a hierarchical clustering for de-noising, which nicely performs this work by wisely tuning the number of minimum points and the cutting height. Once declared as a faulty WBM, then it moves to the next step. In the second step, we classify the patterns among the defective WBMs. For this purpose, we extract features from the WBM. Then machine learning algorithm classifies the pattern. We use a real WBM data set (WM-811K) released by Taiwan semiconductor manufacturing company.

A study on the fabrication and processing of ultra-precision diamond tools using FIB milling (FIB milling을 이용한 고정밀 다이아몬드공구 제작과 공정에 관한 연구)

  • Wi, Eun-Chan;Jung, Sung-Taek;Kim, Hyun-Jeong;Song, Ki-Hyeong;Choi, Young-Jae;Lee, Joo-Hyung;Baek, Seung-Yup
    • Design & Manufacturing
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    • v.14 no.2
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    • pp.56-61
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    • 2020
  • Recently, research for machining next-generation micro semiconductor processes and micro patterns has been actively conducted. In particular, it is applied to various industrial fields depending on the machining method in the case of FIB (Focused ion beam) milling. In this study, intends to deal with FIB milling machining technology for ultra-precision diamond tool fabrication technology. Ultra-precision diamond tools require nano-scale precision, and FIB milling is a useful method for nano-scale precision machining. However, FIB milling has a problem of Gaussian characteristics that are differently formed according to the beam current due to the input of an ion beam source, and there are process conditions to be considered, such as a side clearance angle problem of a diamond tool that is differently formed according to the tilting angle. A series of process steps for fabrication a ultra-precision diamond tool were studied and analyzed for each process. It was confirmed that the effect on the fabrication process was large depending on the spot size of the beam and the current of the beam as a result of the experimental analysis.